E910.54B37AB ELMOS Semiconductor, E910.54B37AB Datasheet - Page 6

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E910.54B37AB

Manufacturer Part Number
E910.54B37AB
Description
Interface - Specialized FlexRay Transceiver
Manufacturer
ELMOS Semiconductor
Datasheet

Specifications of E910.54B37AB

Rohs
yes
Product Type
FlexRay Transceiver
Operating Supply Voltage
5 V
Supply Current
50 mA
Maximum Power Dissipation
150 mW
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Package / Case
TSSOP-14
Minimum Operating Temperature
- 40 C
3.3 bus driver - Host interface
The voltage of INTN to the host microcontroller is at VIO level.
(1 Refer to chapter 4.1.3
3.4 bus driver - bus signal interface
3.4.1 Receiver characteristics
All parameter values are specified at 70ns minimum bit time.
no.
No.
ELMOS Semiconductor AG
10
11
1
2
3
4
5
6
7
8
9
1
2
3
High level input
voltage
Low level input
voltage
High level output
voltage
Low level output
voltage
SPI clock
frequency
Setup time SCSN
Hold time SCSN
Internal process
time between 2
SPI commands
Low level duration
before low/high
transition
Pull up current
Pull down current
Upper receiver
threshold for de-
tecting activity
Lower receiver
threshold for de-
tecting activity
Receiver thresh-
old for detecting
Data_1
Parameter
Parameter
1
I
I
at SCSN, SCK
VIO=5V
at SDI, VIO=5V
Idle Y Data_1
Idle Y Data_0
Data_0 Y Data_1
load
load
= -2mA
= 2mA
condition
condition
uBusActive-
VIH_SCSN,
VOH_INTN
VOH_SDO,
VOL_INTN
VIL_SCSN,
VOL_SDO,
dScsnLow
VIH_SCK,
Data sheet
VIL_SCK,
uData_1
VIH_SDI
uBusAc-
tiveLow
symbol
VIL_SDI
symbol
6/28
dspih
dspid
dspis
High
fSPI
Ipu
Ipd
0.8·VIO
0.7·VIO
-425
Min
Min
100
100
150
100
150
150
-50
5
QM-No.: 25DS0004.00 2010-02-03
typ
typ
-22
30
0.3·VIO
0.2·VIO
Max
Max
-150
VIO
425
300
50
-5
5
E910.54
MHz
Unit
Unit
mV
mV
mV
µA
µA
ns
ns
µs
µs
V
V
V
V

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