AT45DB161E-MHD-Y Adesto Technologies, AT45DB161E-MHD-Y Datasheet - Page 13
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AT45DB161E-MHD-Y
Manufacturer Part Number
AT45DB161E-MHD-Y
Description
Flash 16M 2.5-3.6V 85Mhz Serial Flash
Manufacturer
Adesto Technologies
Datasheet
1.AT45DB161E-SHD-B.pdf
(72 pages)
Specifications of AT45DB161E-MHD-Y
Rohs
yes
Data Bus Width
8 bit
Memory Type
Data Flash
Memory Size
16 Mbit
Architecture
Flexible, Uniform Erase
Timing Type
Synchronous
Interface Type
SPI
Supply Voltage - Max
3.6 V
Supply Voltage - Min
2.5 V
Maximum Operating Current
26 mA
Operating Temperature
- 40 C to + 85 C
Mounting Style
SMD/SMT
Package / Case
UDFN-8
Factory Pack Quantity
490
Part # Aliases
AT45DB161E-MHD-T
6.8
Table 6-1.
Sector Erase
The Sector Erase command can be used to individually erase any sector in the main memory.
The main memory array is comprised of 17 sectors, and only one sector can be erased at a time. To perform an erase of
Sector 0a or Sector 0b with the standard DataFlash page size (528 bytes), an opcode of 7Ch must be clocked into the
device followed by three address bytes comprised of two dummy bits, nine page address bits (PA11 - PA3), and
13 dummy bits. To perform a Sector 1-15 erase, an opcode of 7Ch must be clocked into the device followed by three
address bytes comprised of two dummy bits, four page address bits (PA11 - PA8), and 18 dummy bits.
To perform a Sector 0a or Sector 0b erase with the binary page size (512 bytes), an opcode of 7Ch must be clocked into
the device followed by three address bytes comprised of three dummy bits, nine page address bits (A20 - A12), and
12 dummy bits. To perform a Sector 1-15 erase, an opcode of 7Ch must be clocked into the device followed by three
dummy bits, four page address bits (A20 - A17), and 17 dummy bits.
The page address bits are used to specify any valid address location within the sector to be erased. When a
low-to high transition occurs on the CS pin, the device will erase the selected sector. The erase operation is internally
self-timed and should take place in a maximum time of t
indicate that the device is busy.
The device also incorporates an intelligent algorithm that can detect when a byte location fails to erase properly. If an
erase error arises, it will be indicated by the EPE bit in the Status Register.
PA11/
A20
0
0
0
0
1
1
1
1
•
•
•
PA10/
A19
Block Erase Addressing
0
0
0
0
1
1
1
1
•
•
•
PA9/
A18
0
0
0
0
1
1
1
1
•
•
•
PA8/
A17
0
0
0
0
1
1
1
1
•
•
•
PA7/
A16
0
0
0
0
1
1
1
1
•
•
•
PA6/
A15
0
0
0
0
1
1
1
1
•
•
•
SE
PA5/
A14
. During this time, the RDY/BUSY bit in the Status Register will
0
0
0
0
1
1
1
1
•
•
•
PA4/
A13
0
0
1
1
0
0
1
1
•
•
•
Adesto AT45DB161E [DATASHEET]
PA3/
A12
0
1
0
1
0
1
0
1
•
•
•
PA2/
A11
X
X
X
X
X
X
X
X
•
•
•
PA1/
A10
X
X
X
X
X
X
X
X
•
•
•
8782D–DFLASH–11/2012
PA0/
A9
X
X
X
X
X
X
X
X
•
•
•
Block
508
509
510
511
0
1
2
3
•
•
•
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