CAV25640VE-GT3 ON Semiconductor, CAV25640VE-GT3 Datasheet - Page 3

• Manufacturer Part Number: CAV25640VE-GT3
• Description: EEPROM 64KB SPI SER CMOS EEPROM
• Manufacturer: ON Semiconductor

Specifications of CAV25640VE-GT3

• Product Category: EEPROM

4. AC Test Conditions:
5. This parameter is tested initially and after a design or process change that affects the parameter.
6. t
7. t
Table 4. PIN CAPACITANCE
Table 5. A.C. CHARACTERISTICS
Table 6. POWER−UP TIMING
Symbol
C
t
WC
PUR
C
t
t
WC
OUT
RI
FI
IN
Symbol
Symbol
Input Pulse Voltages: 0.3 V
Input rise and fall times: ≤ 10 ns
Input and output reference voltages: 0.5 V
Output load: current source I
(Note 5)
(Note 5)
t
t
is the time from the rising edge of CS after a valid write sequence to the end of the internal write cycle.
t
f
t
t
t
t
t
t
t
WPH
(Note 6)
PUW
t
t
CNH
WPS
SCK
t
t
t
t
t
CSS
CSH
CNS
PUR
and t
t
WH
DIS
t
WL
HD
CD
HO
SU
t
HZ
CS
LZ
H
V
PUW
Output Capacitance (SO)
Input Capacitance (CS, SCK, SI, WP, HOLD)
are the delays required from the time V
HOLD to Output High Z
Clock Frequency
Data Setup Time
Data Hold Time
SCK High Time
SCK Low Time
HOLD to Output Low Z
Input Rise Time
Input Fall Time
HOLD Setup Time
HOLD Hold Time
Output Valid from Clock Low
Output Hold Time
Output Disable Time
CS High Time
CS Setup Time
CS Hold Time
CS Inactive Setup Time
CS Inactive Hold Time
WP Setup Time
WP Hold Time
Write Cycle Time
Power−up to Read Operation
Power−up to Write Operation
CC
(T
OL max
(Notes 5, 7)
A
to 0.7 V
= 25°C, f = 1.0 MHz, V
Test
/I
(T
Parameter
OH max
A
CC
= −40°C to +125°C) (Note 4)
CC
; C
L
Parameter
= 30 pF
CC
http://onsemi.com
is stable until the specified operation can be initiated.
CC
= +5.0 V) (Note 2)
3
Conditions
V
V
OUT
IN
= 0 V
= 0 V
Min
DC
10
10
40
40
10
40
30
30
20
20
10
10
0
0
V
CC
= 2.5 V − 5.5 V
Min
Typ
Max
Max
10
25
35
20
25
2
2
5
1
1
Max
8
8
Units
Units
MHz
ms
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ms
Units
pF
pF