CAV25640VE-GT3 ON Semiconductor, CAV25640VE-GT3 Datasheet - Page 2

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CAV25640VE-GT3

Manufacturer Part Number
CAV25640VE-GT3
Description
EEPROM 64KB SPI SER CMOS EEPROM
Manufacturer
ON Semiconductor
Datasheet

Specifications of CAV25640VE-GT3

Product Category
EEPROM
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The DC input voltage on any pin should not be lower than −0.5 V or higher than V
2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
3. Page Mode, V
Table 1. ABSOLUTE MAXIMUM RATINGS
Table 2. RELIABILITY CHARACTERISTICS
Table 3. D.C. OPERATING CHARACTERISTICS
Operating Temperature
Storage Temperature
Voltage on any Pin with Respect to Ground (Note 1)
N
Symbol
undershoot to no less than −1.5 V or overshoot to no more than V
and JEDEC test methods.
V
END
I
V
I
I
I
CCW
CCR
V
25640F = Specific Device Code
A
Y
M
XXX = Last Three Digits of
XXX =
G
I
V
SB1
SB2
Symbol
OH1
OL1
I
LO
L
IH
IL
T
(Note 3)
DR
= Assembly Location
= Production Year (Last Digit)
= Production Month (1−9, O, N, D)
= Pb−Free Package
Assembly Lot Number
Supply Current (Read Mode)
Supply Current (Write Mode)
Standby Current
Standby Current
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
(SOIC−8)
AYMXXX
CC
25640F
Endurance
Data Retention
= 5 V, 25°C.
G
Parameter
Parameter
Parameters
S6T = Specific Device Code
A
XX = Last Two Digits of
XXX =
Y
M
G
(Note 2)
Read, V
Write, V
V
WP = V
V
WP = GND, V
V
CS = V
V
I
I
= Assembly Location
= Production Year (Last Digit)
= Production Month (1−9, O, N, D)
= Pb−Free Package
MARKING DIAGRAMS
OL
OH
IN
IN
IN
OUT
Assembly Lot Number
(
http://onsemi.com
V
= 3.0 mA
(TDFN−8)
= GND or V
= GND or V
= GND or V
= −1.6 mA
CC
= GND or V
AXX
S6T
CC
CC
YM
= 2.5 V to 5.5 V, T
CC
CC
G
,
, V
= 5.5 V, 5 MHz, SO open
= 5.5 V, 5 MHz, SO open
CC
2
CC
Test Conditions
CC
CC
CC
CC
= 5.5 V
+ 1.5 V, for periods of less than 20 ns.
= 5.5 V
CC
, CS = V
, CS = V
A
CC
CC
CC
= −40°C to +125°C, unless otherwise specified.)
,
,
+ 0.5 V. During transitions, the voltage on any pin may
1,000,000
Min
100
S64F = Specific Device Code
A
Y
M
XXX = Last Three Digits of
XXX =
G
= Assembly Location
= Production Year (Last Digit)
= Production Month (1−9, O, N, D)
= Pb−Free Package
V
Assembly Lot Number
CC
0.7 V
(TSSOP−8)
AYMXXX
−0.5
Min
−2
−1
− 0.8 V
Program / Erase Cycles
−45 to +130
−65 to +150
−0.5 to +6.5
CC
S64F
Ratings
G
Units
Years
V
0.3 V
CC
Max
0.4
2
3
2
5
2
2
+ 0.5
CC
Units
Units
°C
°C
V
mA
mA
mA
mA
mA
mA
V
V
V
V

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