SPC5646CCF0MLT1 Freescale Semiconductor, SPC5646CCF0MLT1 Datasheet - Page 61

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SPC5646CCF0MLT1

Manufacturer Part Number
SPC5646CCF0MLT1
Description
32-bit Microcontrollers - MCU 3M FLASH,25 6K RAM,CSE
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of SPC5646CCF0MLT1

Rohs
yes
Core
e200
Processor Series
MPC5646C
Data Bus Width
32 bit
Maximum Clock Frequency
120 MHz
Program Memory Size
3 MB
Data Ram Size
256 KB
On-chip Adc
Yes
Operating Supply Voltage
0.3 V to 6.2 V
Operating Temperature Range
- 40 C to + 125 C
Package / Case
LQFP-208
Mounting Style
SMD/SMT
A/d Bit Size
10 bit, 12 bit
A/d Channels Available
33
Interface Type
CAN, I2C, SCI, SPI
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Number Of Programmable I/os
177
Number Of Timers
32
Program Memory Type
Flash
Supply Voltage - Max
6.2 V
Supply Voltage - Min
0.3 V
ECC circuitry provides correction of single bit faults and is used to improve further automotive reliability results. Some units
will experience single bit corrections throughout the life of the product with no impact to product reliability.
4.10.2
Table 29
Freescale
1
1
2
3
4
I
I
I
I
I
I
DFREAD
I
CFMOD
DFMOD
CFPWD
DFPWD
CFLPW
CFREAD
f
V
V
All values need to be confirmed during device validation.
Data based on characterization results, not tested in production.
f
READ
CPU
shows the flash memory power supply DC characteristics on external supply.
Symbol
DD
DD
Symbol
= 3.3 V ± 10% / 5.0 V ± 10%, T
= 3.3 V ± 10% / 5.0 V ± 10%, T
120 MHz  2% can be achieved over full temperature 125 °C ambient, 150 °C junction temperature.
(3)
(3)
(3)
(3)
(3)
(3)
Flash memory power supply DC characteristics
3
CC
CC Sum of the current consumption
CC Sum of the current consumption
CC Sum of the current consumption
CC Sum of the current consumption
on V
on V
on V
memory low power mode
on V
memory power down mode
C
P Maximum frequency for Flash reading 5 wait states
C
D
C
C
C
Table 29. Flash memory power supply DC electrical characteristics
DD_HV_A
DD_HV_A
DD_HV_A
DD_HV_A
Parameter
on read access
(program/erase)
during flash
during flash
Table 28. Flash memory read access timing
MPC5646C Microcontroller DataSheet, Rev. 5.1
Parameter
A
A
= 40 to 125 °C, unless otherwise specified.
= –40 to 125 °C, unless otherwise specified.
Flash memory module read
f
Program/Erase on-going
while reading flash memory
registers
f
CPU
CPU
= 120 MHz  2%
= 120 MHz  2%
4 wait states
3 wait states
2 wait states
1 wait states
0 wait states
Code flash
memory
Conditions
Conditions
4
(4)
1
13 wait states
11 wait states
9 wait states
7 wait states
4 wait states
2 wait states
Code flash
memory
Data flash
memory
Code flash
memory
Data flash
memory
Code flash
memory
Code flash
memory
Data flash
memory
Data flash
memory
1
Min
Frequency
Electrical Characteristics
120 —100
100—80
80—64
64—40
40—20
range
Value
20—0
Typ Max
2
150
150
1.1
33
13
52
13
MHz
Unit
Unit
mA
mA
mA
µA
61

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