SSTUM32866EC/S,518 NXP Semiconductors, SSTUM32866EC/S,518 Datasheet

IC BUFFER 1.8V 25BIT 96-LFBGA

SSTUM32866EC/S,518

Manufacturer Part Number
SSTUM32866EC/S,518
Description
IC BUFFER 1.8V 25BIT 96-LFBGA
Manufacturer
NXP Semiconductors
Datasheet

Specifications of SSTUM32866EC/S,518

Logic Type
1:1, 1:2 Configurable Registered Buffer with Parity
Supply Voltage
1.7 V ~ 2 V
Number Of Bits
25, 14
Operating Temperature
0°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
96-LFBGA
Logic Family
SSTU
Logical Function
Registered Buffer
Number Of Elements
1
Number Of Inputs
25
Number Of Outputs
25
High Level Output Current
-8mA
Low Level Output Current
8mA
Package Type
LFBGA
Propagation Delay Time
3ns
Operating Supply Voltage (typ)
1.8V
Operating Supply Voltage (max)
2V
Operating Supply Voltage (min)
1.7V
Clock-edge Trigger Type
Posit/Negat-Edge
Polarity
Non-Inverting
Technology
CMOS
Mounting
Surface Mount
Pin Count
96
Operating Temp Range
0C to 85C
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
935284578518
SSTUM32866EC/S-T
SSTUM32866EC/S-T

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SSTUM32866EC/S,518
Manufacturer:
NXP Semiconductors
Quantity:
10 000
1. General description
2. Features
The SSTUM32866 is a 1.8 V configurable register specifically designed for use on DDR2
memory modules requiring a parity checking function. It is defined in accordance with the
JEDEC standard for the SSTUM32866 registered buffer. The register is configurable
(using configuration pins C0 and C1) to two topologies: 25-bit 1 : 1 or 14-bit 1 : 2, and in
the latter configuration can be designated as Register A or Register B on the DIMM.
The SSTUM32866 accepts a parity bit from the memory controller on its parity bit
(PAR_IN) input, compares it with the data received on the DIMM-independent D-inputs
and indicates whether a parity error has occurred on its open-drain QERR pin
(active LOW). The convention is even parity, that is, valid parity is defined as an even
number of ones across the DIMM-independent data inputs combined with the parity input
bit.
The SSTUM32866 is the high-output drive version of SSTUG32866.
The SSTUM32866 is packaged in a 96-ball, 6
package (13.5 mm
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
SSTUM32866
1.8 V 25-bit 1 : 1 or 14-bit 1 : 2 configurable registered buffer
with parity for DDR2-1G RDIMM applications
Rev. 01 — 29 June 2007
Configurable register supporting DDR2 up to 800 MT/s Registered DIMM applications
Configurable to 25-bit 1 : 1 mode or 14-bit 1 : 2 mode
Controlled output impedance drivers enable optimal signal integrity and speed
Meets or exceeds SSTUM32866 JEDEC standard speed performance
High output drive
Supports up to 550 MHz clock frequency of operation
Optimized pinout for high-density DDR2 module design
Chip-selects minimize power consumption by gating data outputs from changing state
Supports SSTL_18 data inputs
Checks parity on the DIMM-independent data inputs
Partial parity output and input allows cascading of two SSTUM32866s for correct parity
error processing
Differential clock (CK and CK) inputs
Supports LVCMOS switching levels on the control and RESET inputs
Single 1.8 V supply operation (1.7 V to 2.0 V)
Available in 96-ball, 13.5 mm
5.5 mm).
5.5 mm, 0.8 mm ball pitch LFBGA package
16 grid, 0.8 mm ball pitch LFBGA
Product data sheet

Related parts for SSTUM32866EC/S,518

SSTUM32866EC/S,518 Summary of contents

Page 1

SSTUM32866 1.8 V 25-bit 14-bit configurable registered buffer with parity for DDR2-1G RDIMM applications Rev. 01 — 29 June 2007 1. General description The SSTUM32866 is a 1.8 V configurable register specifically designed ...

Page 2

... NXP Semiconductors 3. Applications I 400 MT/s to 800 MT/s and higher DDR2 registered DIMMs desiring parity checking functionality 4. Ordering information Table 1. Ordering information Type number Solder process SSTUM32866EC/G Pb-free (SnAgCu solder ball compound) SSTUM32866EC/S Pb-free (SnAgCu solder ball compound) 4.1 Ordering options Table 2. ...

Page 3

... NXP Semiconductors 5. Functional diagram (1) Disabled configuration. Fig 1. Functional diagram of SSTUM32866 Register A configuration with and SSTUM32866_1 Product data sheet 1.8 V DDR2-1G configurable registered buffer with parity RESET CK CK VREF DCKE DODT DCS CSR other channels (D3, D5, D6 D14 (positive logic) Rev. 01 — ...

Page 4

... NXP Semiconductors RESET CK CK D2, D3, D5, D6 D14 VREF C1 PAR_IN C0 Fig 2. Parity logic diagram for Register A configuration (positive logic SSTUM32866_1 Product data sheet 1.8 V DDR2-1G configurable registered buffer with parity LPS0 (internal node CLK R D2, D3, D5, D6 D14 PARITY CHECK CLK ...

Page 5

... NXP Semiconductors 6. Pinning information 6.1 Pinning Fig 3. Pin configuration for LFBGA96 Fig 4. Ball mapping register ( SSTUM32866_1 Product data sheet 1.8 V DDR2-1G configurable registered buffer with parity SSTUM32866EC/G SSTUM32866EC/S ball A1 index area 002aad084 Transparent top view DCKE PPO VREF V DD ...

Page 6

... NXP Semiconductors Fig 5. Ball mapping Register A ( Fig 6. Ball mapping Register B ( SSTUM32866_1 Product data sheet 1.8 V DDR2-1G configurable registered buffer with parity DCKE PPO VREF DNU GND GND C D3 DNU DODT QERR GND GND n.c. GND GND G PAR_IN RESET DCS ...

Page 7

... NXP Semiconductors 6.2 Pin description Table 3. Pin description Symbol Pin GND B3, B4, D3, D4, F3, F4, H3, H4, K3, K4, M3, M4, P3 A4, C3, C4, E3, E4, DD G3, G4, J3, J4, L3, L4, N3, N4, R3, R4, T4 VREF A3 RESET G2 CSR J2 DCS H2 [ D25 [2] DODT [2] DCKE PAR_IN G1 [ Q25, Q1A to Q14A, Q1B to Q14B PPO A2 [2] ...

Page 8

... NXP Semiconductors [3] Data outputs = Q2, Q3, Q5, Q6 Q25 when and Data outputs = Q2, Q3, Q5, Q6 Q14 when and Data outputs = Q10, Q12, Q13 when and Functional description The SSTUM32866 is a 25-bit 14-bit configurable registered buffer with parity, designed for 1 2 All clock and data inputs are compatible with the JEDEC standard for SSTL_18. The control and reset (RESET) inputs are LVCMOS ...

Page 9

... NXP Semiconductors The device also supports low-power active operation by monitoring both system chip select (DCS and CSR) inputs and will gate the Qn and PPO outputs from changing states when both DCS and CSR inputs are HIGH. If either DCS or CSR input is LOW, the Qn and PPO outputs will function normally ...

Page 10

... NXP Semiconductors Table 5. Parity and standby function table L = LOW voltage level HIGH voltage level don’t care; RESET DCS CSR floating X or floating X or floating X or floating [1] PPO is the previous state of output PPO; QERR 0 [2] Data inputs = D2, D3, D5, D6 D25 when and ...

Page 11

... NXP Semiconductors 9. Recommended operating conditions Table 7. Recommended operating conditions Symbol Parameter V supply voltage DD V reference voltage ref V termination voltage T V input voltage HIGH-level input voltage IH(AC LOW-level input voltage IL(AC HIGH-level input voltage IH(DC LOW-level input voltage IL(DC) V HIGH-level input voltage ...

Page 12

... NXP Semiconductors 10. Characteristics Table 8. Characteristics At recommended operating conditions (see Symbol Parameter V HIGH-level output voltage OH V LOW-level output voltage OL I input current I I supply current DD I dynamic operating current per DDD MHz C input capacitance i Z output impedance o [1] Instantaneous is defined as within < following the output data transition edge. ...

Page 13

... NXP Semiconductors Table 9. Timing requirements At recommended operating conditions (see Symbol Parameter f clock frequency clock t pulse width W t differential inputs active time ACT t differential inputs inactive time INACT t setup time su t hold time h [1] This parameter is not necessarily production tested. [2] VREF must be held at a valid input voltage level and data inputs must be held LOW for a minimum time of t HIGH ...

Page 14

... NXP Semiconductors 10.1 Timing diagrams RESET DCS CSR D25 Q25 PAR_IN PPO QERR Fig 7. Timing diagram for SSTUM32866 used as a single device SSTUM32866_1 Product data sheet 1.8 V DDR2-1G configurable registered buffer with parity PPO QERR Rev. 01 — 29 June 2007 SSTUM32866 ...

Page 15

... NXP Semiconductors RESET DCS CSR D14 Q14 PAR_IN PPO QERR (not used) Fig 8. Timing diagram for the first SSTUM32866 ( Register A configuration) device used in pair SSTUM32866_1 Product data sheet 1.8 V DDR2-1G configurable registered buffer with parity PPO QERR Rev. 01 — 29 June 2007 ...

Page 16

... NXP Semiconductors RESET DCS CSR D14 Q14 (1) PAR_IN PPO (not used) QERR (1) PAR_IN is driven from PPO of the first SSTUM32866 device. Fig 9. Timing diagram for the second SSTUM32866 ( Register B configuration) device used in pair SSTUM32866_1 Product data sheet 1.8 V DDR2-1G configurable registered buffer with parity ...

Page 17

... NXP Semiconductors 11. Test information 11.1 Parameter measurement information for data output load circuit All input pulses are supplied by generators having the following characteristics: PRR 10 MHz; Z The outputs are measured one at a time with one transition per measurement. CK inputs (1) C Fig 10. Load circuit, data output measurements (1) I Fig 11. Voltage and current waveforms ...

Page 18

... NXP Semiconductors Fig 13. Voltage waveforms; setup and hold times Fig 14. Voltage waveforms; propagation delay times (clock to output) Fig 15. Voltage waveforms; propagation delay times (reset to output) SSTUM32866_1 Product data sheet 1.8 V DDR2-1G configurable registered buffer with parity input V ref V = 600 mV. ...

Page 19

... NXP Semiconductors 11.2 Data output slew rate measurement information All input pulses are supplied by generators having the following characteristics: PRR 10 MHz; Z (1) C Fig 16. Load circuit, HIGH-to-LOW slew measurement Fig 17. Voltage waveforms, HIGH-to-LOW slew rate measurement (1) C Fig 18. Load circuit, LOW-to-HIGH slew measurement Fig 19 ...

Page 20

... NXP Semiconductors 11.3 Error output load circuit and voltage measurement information All input pulses are supplied by generators having the following characteristics: PRR 10 MHz; Z (1) C Fig 20. Load circuit, error output measurements Fig 21. Voltage waveforms, open-drain output LOW-to-HIGH transition time with respect to Fig 22 ...

Page 21

... NXP Semiconductors Fig 23. Voltage waveforms, open-drain output LOW-to-HIGH transition time with respect to 11.4 Partial parity out load circuit and voltage measurement information All input pulses are supplied by generators having the following characteristics: PRR 10 MHz; Z (1) C Fig 24. Partial parity out load circuit Fig 25. Partial parity out voltage waveforms ...

Page 22

... NXP Semiconductors Fig 26. Partial parity out voltage waveforms; propagation delay times with respect to SSTUM32866_1 Product data sheet 1.8 V DDR2-1G configurable registered buffer with parity LVCMOS RESET output and t are the same PLH PHL 250 mV (AC voltage levels) for differential inputs. V ...

Page 23

... NXP Semiconductors 12. Package outline LFBGA96: plastic low profile fine-pitch ball grid array package; 96 balls; body 13.5 x 5.5 x 1.05 mm ball A1 index area ball A1 index area DIMENSIONS (mm are the original dimensions) A UNIT max. 0.41 1.2 0.51 mm 1.5 0.31 0.9 0.41 OUTLINE VERSION IEC SOT536-1 Fig 27 ...

Page 24

... NXP Semiconductors 13. Soldering This text provides a very brief insight into a complex technology. A more in-depth account of soldering ICs can be found in Application Note AN10365 “Surface mount reflow soldering description” . 13.1 Introduction to soldering Soldering is one of the most common methods through which packages are attached to Printed Circuit Boards (PCBs), to form electrical circuits ...

Page 25

... NXP Semiconductors 13.4 Reflow soldering Key characteristics in reflow soldering are: • Lead-free versus SnPb soldering; note that a lead-free reflow process usually leads to higher minimum peak temperatures (see reducing the process window • Solder paste printing issues including smearing, release, and adjusting the process window for a mix of large and small components on one board • ...

Page 26

... NXP Semiconductors Fig 28. Temperature profiles for large and small components For further information on temperature profiles, refer to Application Note AN10365 “Surface mount reflow soldering description” . 14. Abbreviations Table 14. Acronym CMOS DDR DIMM DUT LVCMOS PPO PRR RDIMM SSTL 15. Revision history Table 15 ...

Page 27

... For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail ...

Page 28

... NXP Semiconductors 18. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 4 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4.1 Ordering options . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 3 6 Pinning information . . . . . . . . . . . . . . . . . . . . . . 5 6.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 6.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 7 7 Functional description . . . . . . . . . . . . . . . . . . . 8 7.1 Function table . . . . . . . . . . . . . . . . . . . . . . . . . . 9 8 Limiting values Recommended operating conditions Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . 12 10.1 Timing diagrams . . . . . . . . . . . . . . . . . . . . . . . 14 11 Test information ...

Related keywords