TIM3742-12UL_09 TOSHIBA [Toshiba Semiconductor], TIM3742-12UL_09 Datasheet
TIM3742-12UL_09
Related parts for TIM3742-12UL_09
TIM3742-12UL_09 Summary of contents
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... No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. MICROWAVE POWER GaAs FET TIM3742-12UL BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE SYMBOL ...
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... Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 ° Channel Temperature Storage PACKAGE OUTLINE (2-16G1B) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. TIM3742-12UL SYMBOL UNIT ...
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... VDS= 10V IDS≅ 3.2A 43 Pin= 30.0dBm 3.5 3 3.95GHz V = 10V DS 42 ≅ TIM3742-12UL Output Power vs. Frequency 3.7 3.8 3.9 4 Frequency (GHz) Output Power vs. Input Power Po ηadd Pin (dBm) 3 4.1 4.2 4.3 4 ...
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... TIM3742-12UL Power Dissipation vs. Case Temperature 100 IM3 vs. Output Power Characteristics - 10V DS ≅ 3.95GHz Δ f= 5MHz -30 -40 -50 - Po(dBm), Single Carrier Level 120 160 Tc (℃ 200 ...