EN29LV160 EON [Eon Silicon Solution Inc.], EN29LV160 Datasheet - Page 26

• Manufacturer Part Number: EN29LV160
• Description: 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
• Manufacturer: EON [Eon Silicon Solution Inc.]

Table 11. DC Characteristics
(T
Notes
1. BYTE# pin can also be GND
they draw power if not at full CMOS supply voltages.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
Symbol
V
a
I
I
I
V
V
I
CC1
CC2
CC3
V
V
V
I
LKO
= 0°C to 70°C or - 40°C to 85°C; V
I
LO
OH
ID
OL
LI
IH
ID
IL
Supply Current (Program or Erase)
A9 Voltage (Electronic Signature)
A9 Current (Electronic Signature)
Supply Current (read) CMOS Byte
Supply Current (Standby - TTL)
Output High Voltage CMOS
Supply voltage (Erase and
Output High Voltage TTL
Output Leakage Current
Input Leakage Current
Output Low Voltage
Input High Voltage
Input Low Voltage
Program lock-out)
Parameter
(read) CMOS Word
(Standby - CMOS)
CC
± 0.3V. BYTE# and RESET# pin input buffers are always enabled so that
= 2.7-3.6V)
Byte program, Sector or
CE# = V
RESET# = Vcc ± 0.3V
Chip Erase in progress
BYTE# = RESET# =
Rev. A, Issue Date: 2004/03/30
Test Conditions
0V≤ V
CE# = BYTE# =
26
I
0V≤ V
I
OH
I
OH
OL
CE# = V
Vcc ± 0.3V
f = 5MHZ
(Note 1)
(Note 1)
A9 = V
IL
= -100 µA,
= -2.0 mA
= 4.0 mA
OUT
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
IN
; OE# = V
≤ Vcc
≤ Vcc
ID
IH
,
IH ;
0.85 x
Vcc -
0.7 x
0.4V
10.5
-0.5
Min
Vcc
Vcc
2.3
Typ
EN29LV160
0.4
20
9
9
1
Vcc ±
Max
0.45
11.5
100
1.0
5.0
0.8
0.3
2.5
±5
±5
16
16
30
Unit
mA
mA
mA
mA
µA
µA
µA
µA
V
V
V
V
V
V
V