EN29GL128H-70BAIP EON [Eon Silicon Solution Inc.], EN29GL128H-70BAIP Datasheet

no-image

EN29GL128H-70BAIP

Manufacturer Part Number
EN29GL128H-70BAIP
Description
128 Megabit (16384K x 8-bit / 8192K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only
Manufacturer
EON [Eon Silicon Solution Inc.]
Datasheet
FEATURES
The EN29GL128 offers a fast page access time of 25 ns with a corresponding random access time as
fast as 70 ns. It features a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed
in one operation, resulting in faster effective programming time than standard programming algorithms.
This makes the device ideal for today’s embedded applications that require higher density, better
performance and lower power consumption.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
EN29GL128
128 Megabit (16384K x 8-bit / 8192K x 16-bit) Flash Memory
Page mode Flash Memory, CMOS 3.0 Volt-only
• Single power supply operation
- Full voltage range: 2.7 to 3.6 volts read and
• High performance
- Access times as fast as 70 ns
• V
- All input levels (address, control, and DQ input
• 8-word/16-byte page read buffer
• 32-word/64-byte write buffer reduces overall
• Secured Silicon Sector region
- 128-word/256-byte sector for permanent,
- Can be programmed and locked by the
• Uniform 64Kword/128KByte Sector
• Suspend and Resume commands for
levels) and outputs are determined by voltage
on V
secure identification
customer
programming time for multiple-word updates
Architecture One hundred twenty-eight
sectors
Program and Erase operations
write operations
GENERAL DESCRIPTION
IO
Input/Output 1.65 to 3.6 volts
IO
input. V
IO
range is 1.65 to V
CC
Rev. H, Issue Date: 2009/10/01
1
• Write operation status bits indicate program
• Support for CFI (Common Flash Interface)
• Persistent methods of Advanced Sector
• WP#/ACC input
- Accelerates programming time (when V
- Protects first or last sector regardless of
• Hardware reset input (RESET#) resets
• Ready/Busy# output (RY/BY#) detects
• Minimum 100K program/erase endurance
• Package Options
- 56-pin TSOP
- 64-ball 11mm x 13mm BGA
• Industrial Temperature Range.
applied) for greater throughput during system
production
sector protection settings
cycles.
©2004 Eon Silicon Solution, Inc.,
and erase operation completion
Protection
device
program or erase cycle completion
EN29GL128H/L
www.eonssi.com
HH
is

Related parts for EN29GL128H-70BAIP

Related keywords