EN29LV160 EON [Eon Silicon Solution Inc.], EN29LV160 Datasheet - Page 10

• Manufacturer Part Number: EN29LV160
• Description: 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
• Manufacturer: EON [Eon Silicon Solution Inc.]

then be device-independent, JEDEC ID-
independent, and forward- and backward-
compatible for the specified flash device
families. Flash vendirs can standardize their
existing interfaces for long-term compatibility.
This device enters the CFI Query mode when
the system writes the CFI Query command,
98h, to address 55h in word mode (or
address AAh in byte mode), any time the
device is ready to read array data.
1Bh
1Ch
1Dh
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
(Word Mode)
(Word Mode)
(Word mode)
Addresses
Addresses
Adresses
1Ah
10h
11h
12h
13h
14h
15h
16h
17h
18h
19h
27h
(Byte Mode)
36h
38h
3Ah
3Ch
3Eh
40h
42h
44h
46h
48h
4Ah
4Ch
(Byte Mode)
Addresses
(Byte Mode)
Adresses
Addresses
2Ah
2Ch
2Eh
20h
22h
24h
26h
28h
30h
32h
34h
4Eh
Table 5. CFI Query Identification String
Table 7. Device Geometry Definition
Table 6. System Interface String
0027h
0036h
0000h
0000h
0004h
0000h
000Ah
0000h
0005h
0000h
0004h
0000h
0051h
0052h
0059h
0002h
0000h
0040h
0000h
0000h
0000h
0000h
0000h
Data
Data
0015h
Data
Query Unique ASCII string “QRY”
Primary OEM Command Set
Address for Primary Extended Table
Alternate OEM Command set (00h = none exists)
Address for Alternate OEM Extended Table (00h = none exists
Vcc Min (write/erase)
D7-D4: volt, D3 –D0: 100 millivolt
Vcc Max (write/erase)
D7-D4: volt, D3 –D0: 100 millivolt
Vpp Min. voltage (00h = no Vpp pin present)
Vpp Max. voltage (00h = no Vpp pin present)
Typical timeout per single byte/word write 2^N µs
Typical timeout for Min, size buffer write 2^N µs (00h = not
supported)
Typical timeout per individual block erase 2^N ms
Typical timeout for full chip erase 2^N ms (00h = not supported)
Max. timeout for byte/word write 2^N times typical
Max. timeout for buffer write 2^N times typical
Max. timeout per individual block erase 2^N times typical
Max timeout for full chip erase 2^N times typical (00h = not
supported)
Device Size = 2^N byte
Rev. A, Issue Date: 2004/03/30
10
The system can read CFI information at the
addresses given in Tables 5-8. In word mode,
the upper address bits (A7–MSB) must be all
zeros.
system must write the reset command.
The system can also write the CFI query
command
autoselect mode. The device enters the CFI
query mode and the system can read CFI
data at the addresses given in Tables 5–8.
The system must write the reset command to
return the device to the autoselect mode.
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
To terminate reading CFI data, the
when
Description
Description
Description
the
device
EN29LV160
is
in
the