EN29LV160 EON [Eon Silicon Solution Inc.], EN29LV160 Datasheet - Page 13

• Manufacturer Part Number: EN29LV160
• Description: 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
• Manufacturer: EON [Eon Silicon Solution Inc.]

COMMAND DEFINITIONS
The operations of the EN29LV160 are selected by one or more commands written into the
command register to perform Read/Reset Memory, Read ID, Read Sector Protection, Program,
Sector Erase, Chip Erase, Erase Suspend and Erase Resume. Commands are made up of data
sequences written at specific addresses via the command register.
specified operation are defined in the Command Definitions table (Table 5). Incorrect addresses,
incorrect data values or improper sequences will reset the device to Read Mode.
Table 9. EN29LV160 Command Definitions
Read
Reset
Program
Unlock Bypass
Unlock Bypass Program
Unlock Bypass Reset
Chip Erase
Sector Erase
Erase Suspend
Erase Resume
Address and Data values indicated in hex
RA = Read Address: address of the memory location to be read. This is a read cycle.
RD = Read Data: data read from location RA during Read operation. This is a read cycle.
PA = Program Address: address of the memory location to be programmed. X = Don’t-Care
PD = Program Data: data to be programmed at location PA
SA = Sector Address: address of the Sector to be erased or verified. Address bits A19-A12 uniquely select any Sector.
Reading Array Data
The device is automatically set to reading array data after power up. No commands are required to
retrieve data. The device is also ready to read array data after completing an Embedded Program or
Embedded Erase algorithm.
Following an Erase Suspend command, Erase Suspend mode is entered. The system can read array data
using the standard read timings, with the only difference in that if it reads at an address within erase suspended
sectors, the device outputs status data. After completing a programming operation in the Erase Suspend mode,
the system may once again read array data with the same exception.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
Manufacturer
ID
Device ID
Top Boot
Device ID
Bottom Boot
Sector Protect
Verify
Command
Sequence
Word
Byte
Word
Byte
Word
Byte
Word
Byte
Word
Byte
Word
Byte
Word
Byte
Word
Byte
1
1
4
4
4
4
4
3
2
2
6
6
1
1
Add
RA
xxx
555
AAA
555
AAA
555
AAA
555
AAA
555
AAA
555
AAA
XXX
XXX
555
AAA
555
AAA
xxx
xxx
Write Cycle
1
st
Data
RD
F0
AA
AA
AA
AA
AA
AA
A0
90
AA
AA
B0
30
Add
2AA
555
2AA
555
2AA
555
2AA
555
2AA
555
2AA
555
PA
XXX
2AA
555
2AA
555
Write Cycle
Rev. A, Issue Date: 2004/03/30
2
13
nd
Data
55
55
55
55
55
55
PD
00
55
55
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Add
555
AAA
555
AAA
555
AAA
555
AAA
555
AAA
555
AAA
555
AAA
555
AAA
Write Cycle
3
rd
Data
90
90
90
90
A0
20
80
80
Bus Cycles
Add
000/
100
000/
200
x01
x02
x01
x02
(SA)
X02
(SA)
X04
PA
555
AAA
555
AAA
Write Cycle
The sequences for the
4
th
Data
7F/
1C
7F/
1C
22C4
C4
2249
49
XX00
XX01
00
01
PD
AA
AA
EN29LV160
Add
2AA
555
2AA
555
Write Cycle
5
th
Data
55
55
Add
555
AAA
SA
Write Cycle
6
th
Data
10
30