EN29GL256H EON [Eon Silicon Solution Inc.], EN29GL256H Datasheet - Page 51

• Manufacturer Part Number: EN29GL256H
• Description: 256 Megabit (32768K x 8-bit / 16384K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only
• Manufacturer: EON [Eon Silicon Solution Inc.]

Chip Programming
TABLE 22. ERASE AND PROGRAMMING PERFORMANCE
ACC Total Write Buffer time
Notes:
Table 23. 56-PIN TSOP PIN CAPACITANCE @ 25°C, 1.0MHz
Note: Test conditions are Temperature = 25°C and f = 1.0 MHz.
Table 24. DATA RETENTION
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
Erase/Program Endurance
Parameter Symbol
Word Programming Time
1. Typical program and erase times assume the following conditions: room temperature, 3V and checkboard
2. Maximum program and erase times assume the following conditions: worst case Vcc, 90°C and 100,000 cycles.
Byte Programming Time
Total Write Buffer time
pattern programmed.
Sector Erase Time
Chip Erase Time
Time
C
C
Parameter
C
OUT
IN2
IN
Parameter Description
Data Retention Time
Word
Byte
Control Pin Capacitance
Parameter Description
Output Capacitance
Input Capacitance
268.8
134.4
100K
Typ
160
0.1
60
60
8
8
Rev. G, Issue Date: 2011/01/17
Limits
806.4
403.2
Max
240
200
200
2
Test Conditions
51
Test Setup
V
V
V
OUT
150°C
125°C
IN
IN
©2004 Eon Silicon Solution, Inc.,
cycles
= 0
= 0
Unit
sec
sec
sec
= 0
µs
µs
µs
Excludes system level overhead
Excludes 00h programming prior
Typ
8.5
7.5
6
Minimum 100K cycles
Min
10
20
Comments
EN29GL256H/L
to erasure
Max
7.5
12
9
www.eonssi.com
Years
Years
Unit
Unit
pF
pF
pF