EN29GL256H EON [Eon Silicon Solution Inc.], EN29GL256H Datasheet - Page 13

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EN29GL256H

Manufacturer Part Number
EN29GL256H
Description
256 Megabit (32768K x 8-bit / 16384K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only
Manufacturer
EON [Eon Silicon Solution Inc.]
Datasheet
Table 4. Device OPERATING MODES
Read
Write
Accelerated
Program
CMOS Standby
Output Disable
Hardware Reset
Notes:
1. Addresses are A23:A0 in word mode; A23:A-1 in byte mode.
2. If WP# = VIL, on the outermost sector remains protected. If WP# = VIH, the outermost sector is unprotected. WP# has an
internal pull-up; when unconnected, WP# is at VIH. All sectors are unprotected when shipped from the factory (The Secured
Silicon Sector can be factory protected depending on version ordered.)
3. DIN or DOUT as required by command sequence, data polling, or sector protect algorithm.
Legend
L = Logic Low = VIL, H = Logic High = VIH, VHH = 8.5–9.5V, X = Don’t Care, AIN = Address In, DIN = Data In, DOUT = Data Out
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
Operation
L
L
L
V
±0.3V
L
X
CE#
B
cc
B
L
H
H
X
H
X
OE#
256M FLASH USER MODE TABLE
H
L
L
X
H
X
WE#
Rev. G, Issue Date: 2011/01/17
H
H
H
V
H
L
RESET#
cc
±
0.3V
13
L/H
(Note 1)
V
H
L/H
L/H
WP#/ACC
B
HH
©2004 Eon Silicon Solution, Inc.,
A
A
A
X
X
X
A23
B
B
B
A0-
IN
IN
IN
B
B
B
D
D
D
High-Z
High-Z
High-Z
B
B
B
DQ0-
OUT
IN
IN
DQ7
EN29GL256H/L
B
B
B
www.eonssi.com
D
D
D
High-Z
High-Z
High-Z
BYTE#
B
B
B
= V
OUT
IN
IN
B
B
DQ8-DQ15
B
B
IH
B
DQ8-
DQ14=
High-Z,
DQ15 =
A
High-Z
High-Z
High-Z
BYTE#
-1
= V
B
IL
B

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