EN29GL256H EON [Eon Silicon Solution Inc.], EN29GL256H Datasheet - Page 18

• Manufacturer Part Number: EN29GL256H
• Description: 256 Megabit (32768K x 8-bit / 16384K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only
• Manufacturer: EON [Eon Silicon Solution Inc.]

EN29GL256H/L
operation is in progress.
Write buffer programming is allowed in any sequence of memory (or address) locations. These flash
devices are capable of handling multiple write buffer programming operations on the same write buffer
address range without intervening erases.
Use of the write buffer is strongly recommended for programming when multiple words are to be
programmed.
Figure 5. Write Buffer Programming Operation
This Data Sheet may be revised by subsequent versions
18
©2004 Eon Silicon Solution, Inc.,
www.eonssi.com
or modifications due to changes in technical specifications.
Rev. G, Issue Date: 2011/01/17