HM112 HSMC [Hi-Sincerity Mocroelectronics], HM112 Datasheet

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... HI-SINCERITY MICROELECTRONICS CORP. HM112 NPN EPITAXIAL PLANAR TRANSISTOR Description The HM112 is designed for use in general purpose amplifier and low-speed switching applications. Absolute Maximum Ratings Maximum Temperatures Storage Temperature ................................................................... -55 ~ +150 C Junction Temperature .......................................................... +150 C Maximum Maximum Power Dissipation Total Power Dissipation (T =25 C) ................................................................................................................... 1 ...

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... Saturation Voltage & Collector Current 10000 1000 o 125 C 100 100 1000 Collector Current I Saturation Voltage & Collector Current 10000 1000 o 125 C 100 100 1000 Collector Current I HM112 10000 1000 100 10 hFE @ V =4V CE 1000 10000 (mA) C 10000 1000 CE(sat =100I B ...

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... HI-SINCERITY MICROELECTRONICS CORP. ON Voltage & Collcetor Current 10000 1000 o 125 C 100 100 1000 Collector Current I Capacitance & Reverse-Biased Voltage 1000 100 10 0.1 1 Reverse-Biased Voltage (V) HM112 BE(ON =3V 0.1 10000 (mA) C 100000 10000 1000 Cob 10 100 Spec. No. : HM200102 Issued Date : 2001.07.30 Revised Date : 2002 ...

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... Head Office And Factory: Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HM112 Marking: H Date Code Note: Green label is used for pb-free packing Pin Style: 1 ...

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... L Peak Temperature ( Time within actual Peak Temperature ( Ramp-down Rate o Time Peak Temperature 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. HM112 o o C~35 C Humidity=65%±15% Ramp- Preheat Ramp-down Peak Time Sn-Pb Eutectic Assembly o ) <3 C/sec ...