HBAT54A HSMC [Hi-Sincerity Mocroelectronics], HBAT54A Datasheet

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HBAT54A

Manufacturer Part Number
HBAT54A
Description
Silicon Schottky Barrier Double Diodes
Manufacturer
HSMC [Hi-Sincerity Mocroelectronics]
Datasheet
HBAT54\A\C\S
Description
Silicon Schottky Barrier Double Diodes
Features
These diodes feature very low turn-on voltage and fast switching.
There is a PN junction guard ring against excessive voltage such as
electronics attic discharges protects these devices.
Absolute Maximum Ratings
Characteristics
HBAT54, HBAT54A, HBAT54C, HBAT54S
Reverse breakdown Voltage
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
Storage Temperature .............................................................................................. -65~+125 C
Junction Temperature .................................................................................................... +125 C
Total Power Dissipation (Ta=25 C) ................................................................................ 230 mW
Repetitive Peak Reverse Voltage ........................................................................................ 30 V
Forward Continuous Current .......................................................................................... 200 mA
Repetitive Peak Forward Current .................................................................................. 300 mA
Surge Forward Current (tp<1s)....................................................................................... 600 mA
Maximum Temperatures
Maximum Power Dissipation
Maximum Voltages and Currents (Ta=25 C)
Characteristic
HI-SINCERITY
MICROELECTRONICS CORP.
(Ta=25 C)
V(BR)R
Symbol
VF(1)
VF(2)
VF(3)
VF(4)
VF(5)
CT
Trr
IR
IR=10uA
IF=0.1mA
IF=1mA
IF=10mA
IF=30mA
IF=100mA
VR=25V
VR=1V, f=1MHz
IF=IR=10mA RL=100
measured at IR=1mA
Condition
Min.
30
-
-
-
-
-
-
-
-
Spec. No. : HE6854
Issued Date : 1997.04.28
Revised Date : 2002.10.24
Page No. : 1/3
HSMC Product Specification
SOT-23
Max.
1000
240
320
400
500
2.0
10
5
-
Unit
mV
mV
mV
mV
mV
uA
pF
nS
V

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HBAT54A Summary of contents

Page 1

... Repetitive Peak Reverse Voltage ........................................................................................ 30 V Forward Continuous Current .......................................................................................... 200 mA Repetitive Peak Forward Current .................................................................................. 300 mA Surge Forward Current (tp<1s)....................................................................................... 600 mA Characteristics (Ta=25 C) Characteristic Reverse breakdown Voltage Forward Voltage Reverse Current Total Capacitance Reverse Recovery Time HBAT54, HBAT54A, HBAT54C, HBAT54S Symbol Condition V(BR)R IR=10uA VF(1) IF=0.1mA VF(2) IF=1mA VF(3) IF=10mA VF(4) ...

Page 2

... MICROELECTRONICS CORP. Characteristics Curve Forward Current & Forward Voltage 250 200 150 100 200 400 Forward Voltage-V HBAT54, HBAT54A, HBAT54C, HBAT54S 100 10 600 800 1000 (mV) F Spec. No. : HE6854 Issued Date : 1997.04.28 Revised Date : 2002.10.24 Page No. : 2/3 Diode Capacitance & Reverse-Biased Voltage 1 0 ...

Page 3

... MICROELECTRONICS CORP. SOT-23 Dimension HBAT54: Single Diode , also available as double diodes. (Marking Code L4) HBAT54A: Common Anode. (Marking Code L42) HBAT54C: Common Cathode. (Marking Code L43) HBAT54S: Series Connected. (Marking Code L44) Inches DIM Min. Max. A 0.1102 0.1204 B 0.0472 ...

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