HM14 HSMC [Hi-Sincerity Mocroelectronics], HM14 Datasheet
HM14
Manufacturer Part Number
HM14
Description
NPN EPITAXIAL PLANAR TRANSISTOR
Manufacturer
HSMC [Hi-Sincerity Mocroelectronics]
Datasheet
1.HM14.pdf
(3 pages)
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HM14
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HM14 is a darlington amplifier transistor designed for
applications requiring extremely high current gain.
Features
Absolute Maximum Ratings
Characteristics
Storage Temperature ............................................................................................ -55 ~ +150 C
Junction Temperature ................................................................................... +150 C Maximum
Total Power Dissipation (Ta=25 C) ...................................................................................... 1 W
VCBO Collector to Base Voltage ........................................................................................ 30 V
VCES Collector to Emitter Voltage...................................................................................... 30 V
VEBO Emitter to Base Voltage ........................................................................................... 10 V
IC Collector Current ....................................................................................................... 300 mA
High D.C current gain
HM14 is complementary to HM64
Maximum Temperatures
Maximum Power Dissipation
Maximum Voltages and Currents (Ta=25 C)
*VCE(sat)
*VBE(on)
BVCBO
BVCES
BVEBO
Symbol
*hFE1
*hFE2
ICBO
IEBO
fT
Min.
10K
20K
125
30
30
10
-
-
-
-
HI-SINCERITY
MICROELECTRONICS CORP.
(Ta=25 C)
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
100
100
1.5
2
-
-
-
-
-
-
MHz
Unit
nA
nA
V
V
V
V
V
*Pulse Test : Pulse Width 380us, Duty Cycle 2%
IC=100uA, IE=0
IC=100uA, IB=0
IE=10uA, IC=0
VCB=30V, IE=0
VEB=10V, IC=0
VCE=5V, IC=100mA
VCE=5V, IC=10mA
VCE=5V, IC=10mA, f=100MHz
IC=100mA, IB=0.1mA
VCE=5V, IC=100mA
Test Conditions
Spec. No. :HE5908-B
Issued Date : 1998.04.09
Revised Date : 2000.10.01
Page No. : 1/3
HSMC Product Specification
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HM14 Summary of contents
Page 1
... HI-SINCERITY MICROELECTRONICS CORP. HM14 NPN EPITAXIAL PLANAR TRANSISTOR Description The HM14 is a darlington amplifier transistor designed for applications requiring extremely high current gain. Features High D.C current gain HM14 is complementary to HM64 Absolute Maximum Ratings Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 C Junction Temperature ................................................................................... +150 C Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25 C) ...
Page 2
HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 100000 10000 1000 0 Collector Current (mA) On Voltage & Collector Current BE(on) 0.1 0.01 0.1 1 Collector Current (mA) Capacitance & Reverse-Biased ...
Page 3
HI-SINCERITY MICROELECTRONICS CORP. SOT-89 Dimension Inches DIM Min. Max. A 0.1732 0.1811 B 0.1594 0.1673 C 0.0591 0.0663 D 0.0945 0.1024 E 0.0141 0.0201 Notes : 1.Dimension and tolerance based on ...