HBAT54S HSMC [Hi-Sincerity Mocroelectronics], HBAT54S Datasheet

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HBAT54S

Manufacturer Part Number
HBAT54S
Description
Silicon Schottky Barrier Double Diodes
Manufacturer
HSMC [Hi-Sincerity Mocroelectronics]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HBAT54SLT1
Manufacturer:
MICREL/麦瑞
Quantity:
20 000
HBAT54 Series
Description
Silicon Schottky Barrier Double Diodes
Features
These diodes feature very low turn-on voltage and fast switching. There is a PN
junction guard ring against excessive voltage such as electronics attic discharges
protects these devices.
Absolute Maximum Ratings
Electrical Characteristics
Reverse breakdown Voltage
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
HBAT54, HBAT54A, HBAT54C, HBAT54S
HBAT54: Single Diode, also available as double diodes.
HBAT54A: Common Anode.
HBAT54C: Common Cathode.
HBAT54S: Series Connected.
Maximum Temperatures
Maximum Power Dissipation
Maximum Voltages and Currents (T
Storage Temperature ............................................................................................................................. -65~+125 C
Junction Temperature .................................................................................................................................... +125 C
Total Power Dissipation (T
Repetitive Peak Reverse Voltage ....................................................................................................................... 30 V
Forward Continuous Current ......................................................................................................................... 200 mA
Repetitive Peak Forward Current ................................................................................................................. 300 mA
Surge Forward Current (tp<1s)...................................................................................................................... 600 mA
Characteristic
HI-SINCERITY
MICROELECTRONICS CORP.
A
=25 C) ............................................................................................................... 230 mW
A
=25 C)
(T
A
Symbol
=25 C)
V
V
V
V
V
V
C
T
I
(BR)
F(1)
F(2)
F(3)
F(4)
F(5)
R
rr
T
I
I
I
I
I
I
V
V
I
measured at I
R
F
F
F
F
F
F
=0.1mA
=1mA
=10mA
=30mA
=100mA
R
R
=I
=10uA
=25V
=1V, f=1MHz
R
=10mA, R
Condition
R
L
=1mA
=100 ,
Diagram:
Min.
30
1
1
-
-
-
-
-
-
-
-
HBAT54C
Spec. No. : HE6854
Issued Date : 1997.04.28
Revised Date : 2004.08.26
Page No. : 1/4
HSMC Product Specification
HBAT54
3
3
SOT-23
2
2
Max.
1000
240
320
400
500
2.0
10
5
-
1
1
HBAT54A
HBAT54S
3
3
Unit
mV
mV
mV
mV
mV
2
2
uA
pF
nS
V

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HBAT54S Summary of contents

Page 1

... Repetitive Peak Reverse Voltage ....................................................................................................................... 30 V Forward Continuous Current ......................................................................................................................... 200 mA Repetitive Peak Forward Current ................................................................................................................. 300 mA Surge Forward Current (tp<1s)...................................................................................................................... 600 mA Electrical Characteristics Characteristic Reverse breakdown Voltage Forward Voltage Reverse Current Total Capacitance Reverse Recovery Time HBAT54, HBAT54A, HBAT54C, HBAT54S = = Symbol Condition V I =10uA ...

Page 2

... MICROELECTRONICS CORP. Characteristics Curve Forward Current & Forward Voltage 250 200 150 100 200 400 Forward Voltage-V HBAT54, HBAT54A, HBAT54C, HBAT54S 100 10 600 800 1000 (mV) F Spec. No. : HE6854 Issued Date : 1997.04.28 Revised Date : 2004.08.26 Page No. : 2/4 Diode Capacitance & Reverse-Biased Voltage 1 0 ...

Page 3

... Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HBAT54, HBAT54A, HBAT54C, HBAT54S Marking HBAT54: (L4), HBAT54A: (L42), HBAT54C: (L43), ...

Page 4

... Peak Temperature ( Time within actual Peak Temperature ( Ramp-down Rate o Time Peak Temperature 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. HBAT54, HBAT54A, HBAT54C, HBAT54S o o C~35 C Humidity=65%±15% Ramp- Preheat Ramp-down Peak Time Sn-Pb Eutectic Assembly o ) < ...

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