SGP02N60_07 INFINEON [Infineon Technologies AG], SGP02N60_07 Datasheet - Page 8

• Manufacturer Part Number: SGP02N60_07
• Description: Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
• Manufacturer: INFINEON [Infineon Technologies AG]

Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(V
25 s
20 s
15 s
10 s
25V
20V
15V
10V
5 s
0 s
CE
5V
0V
Figure 17. Typical gate charge
(I
10V
0nC
C
= 600V, start at T
= 2A)
V
GE
11V
,
Q
GATE
5nC
GE
,
GATE CHARGE
-
12V
EMITTER VOLTAGE
120V
j
= 25 C)
10nC
13V
14V
15nC
480V
15V
8
Figure 20. Typical short circuit collector
current as a function of gate-emitter voltage
(V
100pF
CE
10pF
40A
30A
20A
10A
Figure 18. Typical capacitance as a
function of collector-emitter voltage
(V
0A
10V
GE
0V
600V,T
V
= 0V, f = 1MHz)
CE
V
,
GE
COLLECTOR
12V
j
,
= 150 C)
GATE
10V
14V
-
EMITTER VOLTAGE
-
EMITTER VOLTAGE
SGD02N60
SGP02N60
20V
16V
Rev. 2.3
18V
30V
C
C
C
oss
iss
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Sep 07
20V