SGP02N60_07 INFINEON [Infineon Technologies AG], SGP02N60_07 Datasheet

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SGP02N60_07

Manufacturer Part Number
SGP02N60_07
Description
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
Manufacturer
INFINEON [Infineon Technologies AG]
Datasheet
Fast IGBT in NPT-technology
Type
SGP02N60
SGD02N60
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T
T
Pulsed collector current, t
Turn off safe operating area
V
Gate-emitter voltage
Avalanche energy, single pulse
I
start at T
Short circuit withstand time
V
Power dissipation
T
Operating junction and storage temperature
Soldering temperature,
wavesoldering, 1.6mm (0.063 in.) from case for 10s
2
1)
C
C
C
C
CE
GE
J-STD-020 and JESD-022
Qualified according to JEDEC
75% lower E
Short circuit withstand time – 10 s
Designed for:
NPT-Technology for 600V applications offers:
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models :
Allowed number of short circuits: <1000; time between short circuits: >1s.
= 2 A, V
= 25 C
= 100 C
= 25 C
= 15V, V
600V, T
- Motor controls
- Inverter
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
combined with low conduction losses
j
= 25 C
CC
CC
= 50 V, R
j
off
compared to previous generation
150 C
600V, T
600V
600V
V
GE
CE
j
p
= 25
limited by T
1)
150 C
2A
2A
I
C
2
,
for target applications
V
CE(sat)150°C
jmax
2.2V
2.2V
150 C
150 C
http://www.infineon.com/igbt/
T
1
j
PG-TO-252-3-1 (D-PAK)
(TO-252AA)
Marking
G10N60
G10N60
Symbol
V
I
I
-
V
E
t
P
T
T
C
C p u l s
S C
j
s
C E
G E
A S
t o t
, T
s t g
PG-TO-220-3-1
PG-TO-252-3-11
Package
PG-TO-220-3-1
(TO-220AB)
-55...+150
SGD02N60
SGP02N60
Value
600
260
6.0
2.9
12
12
13
10
30
20
Rev. 2.3
G
V
A
V
mJ
W
Unit
C
s
Sep 07
C
E

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SGP02N60_07 Summary of contents

Page 1

Fast IGBT in NPT-technology 75% lower E compared to previous generation off combined with low conduction losses Short circuit withstand time – Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter ...

Page 2

Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient 1) SMD version, device on PCB Electrical Characteristic unless otherwise specified j Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation ...

Page 3

Switching Characteristic, Inductive Load Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Switching Characteristic, Inductive Load Parameter IGBT Characteristic Turn-on delay time Rise time ...

Page 4

I 14A 12A 10A T =80° =110° 10Hz 100Hz 1kHz 10kHz f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (T 150 ...

Page 5

V =20V G E 15V 4A 13V 11V COLLECTOR EMITTER VOLTAGE CE Figure 5. Typical output characteristics ( ...

Page 6

I , COLLECTOR CURRENT C Figure 9. Typical switching times as a function of collector current (inductive load 150 0/+15V ...

Page 7

E and E include losses on ts due to diode recovery. 0.2mJ 0.1mJ 0.0mJ COLLECTOR CURRENT C Figure 13. Typical switching energy losses as a function of collector current (inductive load ...

Page 8

Q , GATE CHARGE GE Figure 17. Typical gate charge ( 10V 11V 12V 13V ...

Page 9

PG-TO220-3-1 9 SGP02N60 SGD02N60 Rev. 2.3 Sep 07 ...

Page 10

SGP02N60 SGD02N60 PG-TO252-3-11 10 Rev. 2.3 Sep 07 ...

Page 11

Figure A. Definition of switching times Figure B. Definition of switching losses SGP02N60 SGD02N60 ( Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance ...

Page 12

Edition 2006-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 9/12/07. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics ...

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