SGP02N60_07 INFINEON [Infineon Technologies AG], SGP02N60_07 Datasheet - Page 7

• Manufacturer Part Number: SGP02N60_07
• Description: Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
• Manufacturer: INFINEON [Infineon Technologies AG]

0.2mJ
0.1mJ
0.0mJ
0.2mJ
0.1mJ
0.0mJ
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, T
V
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, V
I
Dynamic test circuit in Figure E)
C
Dynamic test circuit in Figure E)
GE
= 2A, R
0A
= 0/+15V, R
0°C
*) E
due to diode recovery.
*) E
due to diode recovery.
T
G
j
I
,
on
on
C
= 1 1 8 ,
1A
JUNCTION TEMPERATURE
,
and E
and E
COLLECTOR CURRENT
50°C
G
j
CE
ts
ts
= 150 C, V
= 11 8 ,
include losses
include losses
2A
= 400V, V
100°C
3A
CE
GE
= 400V,
= 0/+15V,
4A
150°C
E
E
E
E
E
E
on
ts
off
on
ts
off
*
*
*
*
5A
7
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(D = t
0.2mJ
0.1mJ
0.0mJ
10
10
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, T
V
10
Dynamic test circuit in Figure E)
GE
-1
-2
0
0
K/W
K/W
K/W
= 0/+15V, I
p
1µs
/ T)
0.01
0.05
0.02
0.1
D=0.5
0.2
*) E
due to diode recovery.
E
E
E
single pulse
on
ts
off
on
10µs 100µs
100
*
*
and E
R
G
C
t
p
,
,
= 2A,
j
GATE RESISTOR
ts
= 150 C, V
PULSE WIDTH
include losses
200
SGD02N60
R
SGP02N60
1.026
1.3
1.69
0.183
R , ( K / W )
1m s
1
C
1
=
CE
1
/ R
Rev. 2.3
10m s 100m s
300
= 400V,
1
C
0.035
3.62*10
4.02*10
4.21*10
2
=
, ( s )
2
/R
400
R
2
-3
-4
-5
Sep 07
2
1s