K4X1G163PC-L SAMSUNG [Samsung semiconductor], K4X1G163PC-L Datasheet - Page 9

• Manufacturer Part Number: K4X1G163PC-L
• Description: Mobile DDR SDRAM
• Manufacturer: SAMSUNG [Samsung semiconductor]

K4X1G163PC - L(F)E/G
9.3. Internal Temperature Compensated Self Refresh (TCSR)
1. In order to save power consumption, Mobile DDR SDRAM includes the internal temperature sensor and control units to control the self
refresh cycle automatically according to the two temperature ranges ; 45 °C and 85 °C.
2. If the EMRS for external TCSR is issued by the controller, this EMRS code for TCSR is ignored.
NOTE :
1) It has +/- 5 °C tolerance.
9.4. Partial Array Self Refresh (PASR)
1. In order to save power consumption, Mobile DDR SDRAM includes PASR option.
2. Mobile DDR SDRAM supports three kinds of PASR in self refresh mode; Full array, 1/2 Array, 1/4 Array.
Temperature Range
45 °C
85 °C
BA1=0
BA0=0
BA1=1
BA0=0
- Full Array
1)
BA1=0
BA0=1
BA1=1
BA0=1
Full Array
1200
600
Figure 4. EMRS code and TCSR , PASR
1/2 Array
500
900
- E
BA1=0
BA0=0
BA1=1
BA0=0
- 1/2 Array
Self Refresh Current (IDD6)
1/4 Array
450
750
- 12 -
BA1=0
BA0=1
BA1=1
BA0=1
Full Array
1000
500
1/2 Array
440
800
- G
Mobile DDR SDRAM
BA1=0
BA0=0
BA1=1
BA0=0
Partial Self Refresh Area
- 1/4 Array
1/4 Array
400
700
BA1=0
BA0=1
BA1=1
BA0=1
November 2007
Unit
uA