K4X1G163PC-L SAMSUNG [Samsung semiconductor], K4X1G163PC-L Datasheet - Page 16

• Manufacturer Part Number: K4X1G163PC-L
• Description: Mobile DDR SDRAM
• Manufacturer: SAMSUNG [Samsung semiconductor]

K4X1G163PC - L(F)E/G
17. AC Overshoot/Undershoot Specification for Address & Control Pins
18. AC Overshoot/Undershoot Specification for CLK, DQ, DQS and DM Pins
Volts
Volts
(V)
(V)
Figure 8. AC Overshoot and Undershoot Definition for CLK, DQ, DQS and DM Pins
VDD
VDDQ
VSSQ
VSS
Figure 7. AC Overshoot and Undershoot Definition for Address and Control Pins
Maximum peak Amplitude allowed for undershoot area
Maximum peak Amplitude allowed for undershoot area
Maximum peak Amplitude allowed for overshoot area
Maximum peak Amplitude allowed for overshoot area
Maximum undershoot area below VSSQ
Maximum overshoot area above VDDQ
Maximum undershoot area below VSS
Maximum overshoot area above VDD
Parameter
Parameter
Maximum Amplitude
Maximum Amplitude
Maximum Amplitude
Maximum Amplitude
Time (ns)
Time (ns)
- 19 -
Undershoot Area
Undershoot Area
Overshoot Area
Overshoot Area
Mobile DDR SDRAM
Specification
Specification
3V-ns
3V-ns
3V-ns
3V-ns
0.9V
0.9V
0.9V
0.9V
November 2007