K4X1G163PC-L SAMSUNG [Samsung semiconductor], K4X1G163PC-L Datasheet - Page 10

• Manufacturer Part Number: K4X1G163PC-L
• Description: Mobile DDR SDRAM
• Manufacturer: SAMSUNG [Samsung semiconductor]

K4X1G163PC - L(F)E/G
10. Absolute maximum ratings
NOTE :
1) Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
2) Functional operation should be restricted to recommend operation condition.
3) Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
11. DC Operating Conditions
Recommended operating conditions(Voltage referenced to VSS=0V, Tc = -25°C to 85°C)
NOTE :
1) Under all conditions, VDDQ must be less than or equal to VDD.
2) These parameters should be tested at the pin on actual components and may be checked at either the pin or the pad in simulation.
Supply voltage(for device with a nominal VDD of 1.8V)
Voltage on V
Voltage on V
Voltage on any pin relative to V
Storage temperature
Short circuit current
Power dissipation
Output leakage current
DDQ
Output logic high voltage
Output logic low voltage
DD
Input logic high voltage
Parameter
Input logic low voltage
Input leakage current
I/O Supply voltage
supply relative to V
Parameter
supply relative to V
SS
SS
SS
V
Symbol
IN
VOH(DC)
VOL(DC)
V
T
VIH(DC)
Symbol
VIL(DC)
V
, V
I
VDDQ
P
DDQ
STG
OS
VDD
DD
IOZ
D
OUT
II
- 13 -
0.7 x VDDQ
0.9 x VDDQ
Min
-0.3
1.7
1.7
-2
-5
-
-55 ~ +150
-0.5 ~ 2.7
-0.5 ~ 2.7
-0.5 ~ 2.7
Value
1.0
50
0.3 x VDDQ
0.1 x VDDQ
VDDQ+0.3
Max
1.95
1.95
2
5
-
Mobile DDR SDRAM
Unit
uA
uA
V
V
V
V
V
V
November 2007
IOH = -0.1mA
IOL = 0.1mA
Unit
mA
°C
W
V
V
V
Note
1
1
2
2