K4X1G163PC-L SAMSUNG [Samsung semiconductor], K4X1G163PC-L Datasheet - Page 14

• Manufacturer Part Number: K4X1G163PC-L
• Description: Mobile DDR SDRAM
• Manufacturer: SAMSUNG [Samsung semiconductor]

K4X1G163PC - L(F)E/G
NOTE :
1) Input Setup/Hold Slew Rate Derating
2) Minimum 3CLK of tDAL(= tWR + tRP) is required because it need minimum 2CLK for tWR and minimum 1CLK for tRP.
3) tAC(min) value is measured at the high Vdd(1.95V) and cold temperature(-25°C).
4) The specific requirement is that DQS be valid(High or Low) on or before this CK edge. The case shown(DQS going from
5) I/O Setup/Hold Slew Rate Derating
This derating table is used to increase t
6) I/O Delta Rise/Fall Rate(1/slew-rate) Derating
1/SlewRate1-1/SlewRate2. For example, if slew rate 1 = 1.0V/ns and slew rate 2 =0.8V/ns, then the Delta Rise/Fall Rate =-0.25ns/V.
7) Maximum burst refresh cycle : 8
Auto refresh cycle time
Exit self refresh to active command
Data hold from DQS to earliest DQ edge
Data hold skew factor
Clock half period
This derating table is used to increase tDS/tDH in the case where the DQ and DQS slew rates differ. The Delta Rise/Fall Rate is calculated as
This derating table is used to increase t
tAC(max) value is measured at the low Vdd(1.7V) and hot temperature(85°C).
tAC is measured in the device with half driver strength and under the AC output load condition (Fig.7 in next Page).
High_Z to logic Low) applies when no writes were previously in progress on the bus. If a previous write was in progress,
DQS could be High at this time, depending on tDQSS.
Parameter
Input Setup/Hold Slew Rate
I/O Setup/Hold Slew Rate
Data Rise/Fall Rate
(V/ns)
(V/ns)
(ns/V)
±0.25
±0.5
1.0
0.8
0.6
1.0
0.8
0.6
0
DS
IS
/t
DH
/t
IH
in the case where the I/O slew rate is below 1.0V/ns.
in the case where the input slew rate is below 1.0V/ns.
Symbol
tQHS
tRFC
tXSR
tQH
tHP
tCLmin or
tHPmin -
tCHmin
tQHS
Min
120
72
- 17 -
DDR333
Max
0.65
+100
+150
+100
∆tIS
∆tIS
∆tIS
(ps)
+50
(ps)
+75
(ps)
+50
0
0
0
tCLmin or
tHPmin -
tCHmin
tQHS
Min
120
80
DDR266
Mobile DDR SDRAM
Max
0.75
+100
+150
+100
∆tIH
∆tIH
∆tIH
(ps)
+50
(ps)
+75
(ps)
+50
0
0
0
Unit
November 2007
ns
ns
ns
ns
ns
Note
7