K4J55323QF-GC15 Samsung, K4J55323QF-GC15 Datasheet - Page 37

• Manufacturer Part Number: K4J55323QF-GC15
• Description: 256Mbit GDDR3 SDRAM
• Manufacturer: Samsung

K4J55323QF-GC
WRITE to PRECHARGE
COMMAND
ADDRESS
t
t
DQSS
DQSS
t
DQSS
NOTE
WDQS
WDQS
WDQS
/CK
(NOM)
(MAX)
CK
DM
(MIN)
DM
DM
DQ
DQ
DQ
:
1. DI b = data-in for column b.
2. Three subsequent elements of data-in the programmed order following DI b.
3. A burst of 4 is shown.
4. A8 is LOW with the WRITE command (auto precharge is disabled).
5. WRITE latency is set to 3
WRITE
Col b
Bank
T0
t
t
t
DQSS
DQSS
DQSS
NOP
T1
WRITE
Bank
Col b
T2
DI
b
NOP
T3
DI
b
DI
b
T3n
- 37 -
NOP
T4
T4n
DON’T CARE
NOP
T5
NOP
t
T11
WR
256M GDDR3 SDRAM
TRANSITIONING DATA
Bank
PRE
T12
Rev 1.7 (Jan. 2005)
NOP
T13
t
RP
NOP
T14