K4J55323QF-GC15 Samsung, K4J55323QF-GC15 Datasheet - Page 33

• Manufacturer Part Number: K4J55323QF-GC15
• Description: 256Mbit GDDR3 SDRAM
• Manufacturer: Samsung

K4J55323QF-GC
Consecutive WRITE to WRITE
COMMAND
ADDRESS
WDQS
DM
NOTE
CK#
CK
DQ
:
1. DI b, etc. = data-in for column b, etc.
2. Three subsequent elements of data-in are applied in the programmed order following DI b.
3. Three subsequent elements of data-in are applied in the programmed order following DI n.
4. Burst of 4 is shown.
5. Each WRITE command may be to any bank of the same device.
6. Write latency is set to 3
WRITE
Col b
Bank
T0
t
DQSS
(NOM)
NOP
T1
WRITE
Bank
Col n
T2
- 33 -
NOP
DI
T3
b
T3n
DI
DON’T CARE
b
NOP
T4
DI
b
T4n
DI
b
256M GDDR3 SDRAM
NOP
TRANSITIONING DATA
T5
DI
n
T5n
DI
n
Rev 1.7 (Jan. 2005)
NOP
T6
DI
n
T6n
DI
n
NOP
T7