K4J55323QF-GC15 Samsung, K4J55323QF-GC15 Datasheet - Page 25

• Manufacturer Part Number: K4J55323QF-GC15
• Description: 256Mbit GDDR3 SDRAM
• Manufacturer: Samsung

K4J55323QF-GC
READ Burst
COMMAND
COMMAND
ADDRESS
ADDRESS
RDQS
RDQS
/CK
CK
/CK
CK
NOTE :
DQ
DQ
1. DO n=data-out from column n.
2. Burst length = 4
3. Three subsequent elements of data-out appear in the programmed order following DQ n.
4. Shown with nominal t
5. RDQS will start driving high 1/2 clock cycle prior to the first falling edge.
Bank a,
Bank a,
READ
READ
Col n
Col n
T0
T0
CL = 8
CL = 9
NOP
NOP
AC
T7
T7
and t
DQSQ.
NOP
NOP
T8
T8
- 25 -
DO
n
T8n
DON’T CARE
NOP
NOP
T9
T9
DO
n
T9n
T9n
256M GDDR3 SDRAM
NOP
T10
NOP
T10
TRANSITIONING DATA
Rev 1.7 (Jan. 2005)
NOP
T11
NOP
T11