K9F5608Q0C-H SAMSUNG [Samsung semiconductor], K9F5608Q0C-H Datasheet - Page 3

• Manufacturer Part Number: K9F5608Q0C-H
• Description: 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

PRODUCT LIST
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
FEATURES
GENERAL DESCRIPTION
Offered in 32Mx8bit or 16Mx16bit, the K9F56XXX0C is 256M bit with spare 8M bit capacity. The device is offered in 1.8V, 2.65V,
3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can
be performed in typical 200 s on a 528-byte(X8 device) or 264-word(X16 device) page and an erase operation can be performed in
typical 2ms on a 16K-byte(X8 device) or 8K-word(X16 device) block. Data in the page can be read out at 50ns(K9F5616Q0C : 60ns)
control automates all program and erase functions including pulse repetition, where required, and internal verification and margining
of data.
cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm.
The K9F56XXX0C is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable
applications requiring non-volatility.
K9F5608Q0C
K9F5608D0C
K9F5608U0C
cycle time per word. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write
- Memory Cell Array
- Data Register
- Page Program
- Block Erase :
- Page Size
- Random Access
- Serial Page Access : 50ns(Min.)*
- Program time : 200 s(Typ.)
- Block Erase Time : 2ms(Typ.)
Voltage Supply
Organization
Automatic Program and Erase
Page Read Operation
Fast Write Cycle Time
- 1.8V device(K9F56XXQ0C) : 1.70~1.95V
- 2.65V device(K9F56XXD0C) : 2.4~2.9V
- 3.3V device(K9F56XXU0C) : 2.7 ~ 3.6 V
- X8 device(K9F5608X0C) : (32M + 1024K)bit x 8 bit
- X16 device(K9F5616X0C) : (16M + 512K)bit x 16bit
- X8 device(K9F5608X0C) : (512 + 16)bit x 8bit
- X16 device(K9F5616X0C) : (256 + 8)bit x16bit
- X8 device(K9F5608X0C) : (512 + 16)Byte
- X16 device(K9F5616X0C) : (256 + 8)Word
- X8 device(K9F5608X0C) : (16K + 512)Byte
- X16 device(K9F5616X0C) : ( 8K + 256)Word
- X8 device(K9F5608X0C) : (512 + 16)Byte
- X16 device(K9F5616X0C) : (256 + 8)Word
*K9F5616Q0C : 60ns
K9F5608Q0C-D,H
K9F5616Q0C-D,H
K9F5608D0C-D,H
K9F5616D0C-D,H
K9F5608U0C-D,H
K9F5616U0C-D,H
K9F5608D0C-Y,P
K9F5616D0C-Y,P
K9F5608U0C-Y,P
K9F5608U0C-V,F
K9F5616U0C-Y,P
Part Number
Even the write-intensive systems can take advantage of the K9F56XXX0C s extended reliability of 100K program/erase
: 10 s(Max.)
K9F5616Q0C
K9F5616D0C
K9F5616U0C
1.70 ~ 1.95V
Vcc Range
2.4 ~ 2.9V
2.7 ~ 3.6V
3
- Program/Erase Lockout During Power Transitions
- Endurance
- Data Retention : 10 Years
- K9F56XXX0C-YCB0/YIB0
- K9F56XXX0C-DCB0/DIB0
- K9F5608U0C-VCB0/VIB0
- K9F56XXX0C-PCB0/PIB0
- K9F56XXX0C-HCB0/HIB0
- K9F5608U0C-FCB0/FIB0
Power-On Auto-Read Operation
Safe Lock Mechanism
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection
Reliable CMOS Floating-Gate Technology
Command Register Operation
Intelligent Copy-Back
Unique ID for Copyright Protection
Package
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
63- Ball TBGA ( 9 x 11 /0.8mm pitch , Width 1.0 mm)
48 - Pin WSOP I (12X17X0.7mm)
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package
63- Ball TBGA ( 9 x 11 /0.8mm pitch , Width 1.0 mm)
- Pb-free Package
48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package
* K9F5608U0C-V,F(WSOPI ) is the same device as
K9F5608U0C-Y,P(TSOP1) except package type.
Organization
X16
X16
X16
X8
X8
X8
: 100K Program/Erase Cycles
FLASH MEMORY
PKG Type
WSOP1
TSOP1
TSOP1
TSOP1
TSOP1
TBGA
TBGA
TBGA
TBGA
TBGA