K9F5608Q0C-H SAMSUNG [Samsung semiconductor], K9F5608Q0C-H Datasheet - Page 24

• Manufacturer Part Number: K9F5608Q0C-H
• Description: 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

Status Read Cycle
READ1 OPERATION
K9F5608Q0C
K9F5608D0C
K9F5608U0C
CLE
CE
WE
RE
I/Ox
CLE
CE
WE
ALE
RE
R/B
I/Ox
X8 device : m = 528 , Read CMD = 00h or 01h
X16 device : m = 264 , Read CMD = 00h
t
Read
WC
CMD
K9F5616Q0C
K9F5616D0C
K9F5616U0C
N Address
(READ ONE PAGE)
A0~A7
Column
Address
A9~A16
t
CLS
Page(Row)
Address
t
CS
A17~A24
t
WP
t
DS
70h
t
WB
Busy
t
t
RR
R
t
t
t
CH
CLH
DH
t
AR
On K9F5608U0C_Y,P,V,F or K9F5608D0C_Y,P
CE must be held
low during tR
24
Dout N
NOTES : 1) is only valid
t
WHR1
Dout N+1
t
CLR
t
RC
t
IR
Dout N+2
t
CEA
t
REA
On
Dout N+3
K9F5608U0C_Y,P,V,F or K9F5608D0C_Y,P
FLASH MEMORY
Status Output
t
t
t
RHZ
t
CHZ
OH
OH
1)
Dout m
1)
t
RHZ
t
OH
t
RB
t
t
CHZ
OH
t
CEH
t
CRY