K9F5608Q0C-H SAMSUNG [Samsung semiconductor], K9F5608Q0C-H Datasheet - Page 18

• Manufacturer Part Number: K9F5608Q0C-H
• Description: 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

NAND Flash Technical Notes
K9F5608Q0C
K9F5608D0C
K9F5608U0C
* Step1
When an error happens in the nth page of the Block ’ A’ during erase or program operation.
* Step2
Copy the nth page data of the Block ’ A’ in the buffer memory to the nth page of another free block. (Block ’ B’ )
* Step3
Then, copy the data in the 1st ~ (n-1)th page to the same location of the Block ’ B’ .
* Step4
Do not further erase Block ’ A’ by creating an ’ invalid Block’ table or other appropriate scheme.
Erase Flow Chart
*
Block Replacement
Erase Error
: If erase operation results in an error, map out
the failing block and replace it with another block.
*
1st
(n-1)th
nth
(page)
1st
(n-1)th
nth
(page)
No
an error occurs.
K9F5616Q0C
K9F5616D0C
K9F5616U0C
Read Status Register
Write Block Address
Block A
Block B
Erase Completed
or R/B = 1 ?
I/O 0 = 0 ?
I/O 6 = 1 ?
Write D0h
Write 60h
Start
Yes
Yes
(Continued)
2
Buffer memory of the controller.
1
No
18
Reclaim the Error
Read Flow Chart
No
Page Read Completed
FLASH MEMORY
ECC Generation
Write Address
Verify ECC
Read Data
Write 00h
Start
Yes