K9F5608Q0C-H SAMSUNG [Samsung semiconductor], K9F5608Q0C-H Datasheet - Page 25

• Manufacturer Part Number: K9F5608Q0C-H
• Description: 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

READ1 OPERATION
READ2 OPERATION
K9F5608Q0C
K9F5608D0C
K9F5608U0C
I/Ox
CLE
CE
WE
ALE
RE
R/B
CLE
CE
WE
ALE
RE
R/B
I/Ox
50h
Read
CMD
K9F5616Q0C
K9F5616D0C
K9F5616U0C
N Address
X8 device : A
M Address
X16 device : A
Column
Address
(INTERCEPTED BY CE)
(READ ONE PAGE)
Col. Add
Col. Add
Row Add1
0
Row Add1
~A
0
Page(Row)
Address
~A
3
2
are Valid Address & A
are Valid Address & A
Row Add2
Row Add2
t
t
WB
WB
t
Busy
t
RR
R
t
X8 device : n = 512, m = 16
X16 device : n = 256, m = 8
AR
25
4
~A
3
~A
On K9F5608U0C_Y,P,V,F or K9F5608D0C_Y,P
CE must be held
low during tR
7
Dout N
7
t
are Don
R
are "L"
t
Dout N+1
t
care
AR
t
RC
On K9F5608U0C_Y,P,V,F or K9F5608D0C_Y,P
CE must be held
low during tR
t
RR
Dout N+2
Selected
Row
Dout
n+M
FLASH MEMORY
Dout N+3
n+M+1
t
t
Dout
CHZ
OH
n
Dout n+m
address M
Start
m