HAT2210R-EL-E RENESAS [Renesas Technology Corp], HAT2210R-EL-E Datasheet - Page 9

• Manufacturer Part Number: HAT2210R-EL-E
• Description: Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
• Manufacturer: RENESAS [Renesas Technology Corp]

HAT2210R, HAT2210RJ
Rev.3.00, Mar.15.2005, page 9 of 11
0.001
20
10
0.01
0
0.1
10
10
1
Source to Drain Voltage
D = 1
0.5
0.4
Reverse Drain Current vs.
Source to Drain Voltage
100
5 V
10 V
0.8
Normalized Transient Thermal Impedance vs. Pulse Width
1 m
V
1.2
GS
= 0 V, –5 V
Pulse Test
10 m
V
1.6
SD
(V)
Pulse Width PW (S)
2.0
100 m
1
10
8
6
4
2
0
When using the glass epoxy board
(FR4 40x40x1.6 mm)
P
25
ch - f(t) = s (t) x ch - f
ch - f = 125 C/W, Ta = 25 C
DM
Maximum Avalanche Energy vs.
Channel Temperature Derating
Channel Temperature Tch (°C)
10
50
PW
T
100
75
100
1000
I
V
duty < 0.1 %
Rg > 50
AP
D =
DD
= 8 A
= 15 V
PW
T
125
10000
150