HAT2210R-EL-E RENESAS [Renesas Technology Corp], HAT2210R-EL-E Datasheet - Page 4

• Manufacturer Part Number: HAT2210R-EL-E
• Description: Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
• Manufacturer: RENESAS [Renesas Technology Corp]

HAT2210R, HAT2210RJ
Main Characteristics
Rev.3.00, Mar.15.2005, page 4 of 11
MOS1
200
150
100
4.0
3.0
2.0
1.0
20
10
50
0
0
0
Drain to Source Saturation Voltage vs
Test Condition :
Power vs. Temperature Derating
Pulse Test
Drain to Source Voltage V
Gate to Source Voltage
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
Ambient Temperature
Typical Output Characteristics
4.5 V
10 V
4
Gate to Source Voltage
50
8
100
5
12
V
Pulse Test
150
GS
Ta ( C)
V
16
I
DS
GS
D
= 2.8 V
= 5 A
3.6 V
3.2 V
2 A
1 A
(V)
(V)
200
20
10
1000
0.01
100
0.1
20
10
10
100
1
10
Static Drain to Source on State Resistance
0.1
0
1
0.1
Operation in
this area is
limited by R
Ta = 25 C
1 shot Pulse
Note 5 :
Drain to Source Voltage V
When using the glass epoxy board
(FR4 40x40x1.6 mm)
V
Gate to Source Voltage
Typical Transfer Characteristics
Maximum Safe Operation Area
GS
2
= 4.5 V
Drain Current
10 V
vs. Drain Current
DS(on)
1
1
25 C
4
Tc = 75 C
25 C
6
10
I
D
10
V
Pulse Test
Pulse Test
DS
(A)
10 s
V
DS
8
GS
= 10 V
(V)
(V)
100
10
100