HAT2210R-EL-E RENESAS [Renesas Technology Corp], HAT2210R-EL-E Datasheet
HAT2210R-EL-E
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HAT2210R-EL-E Summary of contents
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... HAT2210R, HAT2210RJ Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching Features Low on-resistance Capable of 4.5 V gate drive High density mounting Built-in Schottky Barrier Diode Outline RENESAS Package code: PRSP0008DD-A (Package name: SOP-8<FP-8DA> ...
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... HAT2210R, HAT2210RJ Electrical Characteristics • MOS1 Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Zero gate voltage HAT2210R drain current HAT2210RJ Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance ...
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... HAT2210R, HAT2210RJ • MOS2 & Schottky Barrier Diode Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance ...
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... HAT2210R, HAT2210RJ Main Characteristics MOS1 Power vs. Temperature Derating 4.0 Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 3.0 2.0 1 100 Ambient Temperature Typical Output Characteristics 20 4 Pulse Test 0 5 Drain to Source Voltage V Drain to Source Saturation Voltage vs Gate to Source Voltage ...
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... HAT2210R, HAT2210RJ Static Drain to Source on State Resistance vs. Temperature 50 Pulse Test 4 - Case Temperature Body-Drain Diode Reverse Recovery Time 100 100 0.1 0 Reverse Drain Current Dynamic Input Characteristics 7 ...
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... HAT2210R, HAT2210RJ Reverse Drain Current vs. Source to Drain Voltage 0.4 0.8 Source to Drain Voltage Normalized Transient Thermal Impedance vs. Pulse Width 0.5 0.1 0.01 0.001 100 10 Rev.3.00, Mar.15.2005, page – Pulse Test 0 25 1.2 1.6 2 ...
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... HAT2210R, HAT2210RJ MOS2 & Schottky Barrier Diode Power vs. Temperature Derating 4.0 Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 3.0 2.0 1 100 Ambient Temperature Typical Output Characteristics 20 4 Drain to Source Voltage V Drain to Source Saturation Voltage vs Gate to Source Voltage ...
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... HAT2210R, HAT2210RJ Static Drain to Source on State Resistance vs. Temperature 50 Pulse Test 4 - Case Temperature Body-Drain Diode Reverse Recovery Time 100 100 0.1 0 Reverse Drain Current Dynamic Input Characteristics ...
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... HAT2210R, HAT2210RJ Reverse Drain Current vs. Source to Drain Voltage 0.4 0.8 Source to Drain Voltage Normalized Transient Thermal Impedance vs. Pulse Width 0.5 0.1 0.01 0.001 100 10 Rev.3.00, Mar.15.2005, page – Pulse Test 0 1.2 1 ...
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... HAT2210R, HAT2210RJ Common Avalanche Test Circuit V DS Monitor Rg Vin Switching Time Test Circuit Vin Monitor Rg Vin 10 V Rev.3.00, Mar.15.2005, page Monitor Vout Monitor D.U. Vin V DS Vout = 10 V td(on) Avalanche Waveform V DSS ...
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... Ordering Information Part Name HAT2210R-EL-E 2500 pcs HAT2210RJ-EL-E 2500 pcs Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00, Mar.15.2005, page Package Name MASS[Typ.] FP-8DA 0 ...
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Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...