HAT2210R-EL-E RENESAS [Renesas Technology Corp], HAT2210R-EL-E Datasheet - Page 10

• Manufacturer Part Number: HAT2210R-EL-E
• Description: Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
• Manufacturer: RENESAS [Renesas Technology Corp]

HAT2210R, HAT2210RJ
Rev.3.00, Mar.15.2005, page 10 of 11
Common
Vin
10 V
Switching Time Test Circuit
Vin
10 V
Vin Monitor
Rg
Avalanche Test Circuit
V
Monitor
50
DS
Rg
D.U.T.
D. U. T
I
Monitor
AP
R
L
V
= 10 V
L
DS
Vout
Monitor
V
DD
0
V
DD
td(on)
Vout
Vin
E
AR
I
AP
Switching Time Waveform
=
Avalanche Waveform
10%
1
2
10%
I
D
90%
L I
tr
AP
2
td(off)
V
90%
DSS –
V
DSS
V
DS
V
90%
DD
V
(BR)DSS
10%
t
f