BSS225_11 INFINEON [Infineon Technologies AG], BSS225_11 Datasheet - Page 6

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BSS225_11

Manufacturer Part Number
BSS225_11
Description
SIPMOS Small-Signal-Transistor
Manufacturer
INFINEON [Infineon Technologies AG]
Datasheet
Rev. 1.23
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
130
120
110
100
10
10
10
10
90
80
70
60
50
40
30
20
10
DS
=f(T
0
3
2
1
0
-60
); V
0
j
); I
GS
D
=0 V; f =1 MHz; T
-20
=0.1 A; V
10
20
%98
20
GS
V
T
=10 V
DS
j
[°C]
[V]
60
j
typ
=25°C
30
100
40
Coss
Ciss
Crss
140
page 6
50
10 Typ. gate threshold voltage
V
parameter: I
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
10
10
10
2.8
2.4
1.6
1.2
0.8
0.4
10
=f(T
SD
2
0
-1
-2
-3
0
-60
)
0
j
); V
D
j
0.4
DS
-20
150 °C
=V
0.8
GS
; I
20
150 °C, 98%
D
1.2
=94 µA
25 °C, 98%
25 °C
V
T
j
SD
[°C]
1.6
60
[V]
%98
typ
%2
2
100
2.4
BSS225
140
2.8
2011-03-08

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