BSS225_11 INFINEON [Infineon Technologies AG], BSS225_11 Datasheet - Page 3

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BSS225_11

Manufacturer Part Number
BSS225_11
Description
SIPMOS Small-Signal-Transistor
Manufacturer
INFINEON [Infineon Technologies AG]
Datasheet
Rev. 1.23
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
d(on)
r
d(off)
f
S
S,pulse
rr
rss
plateau
SD
iss
oss
gs
gd
g
rr
V
f =1 MHz
V
V
R
V
I
V
T
V
T
V
di
D
page 3
A
j
GS
DD
GS
DD
GS
GS
R
G
=0.09 A,
=25 °C
F
=25 °C
=300 V, I
/dt =100 A/µs
=6 Ω
=0 V, V
=300 V,
=10 V, I
=400 V,
=0 to 10 V
=0 V, I
F
DS
=0.09 A,
D
F
=0.09 A,
=0.09 A,
=25 V,
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
14.0
38.0
62.0
41.0
0.32
0.75
typ.
246
248
7.6
3.1
1.4
3.9
3.3
99
-
-
max.
20.0
57.0
0.43
0.09
0.36
131
370
373
4.4
2.1
5.8
1.2
11
93
62
-
BSS225
Unit
pF
ns
nC
V
A
V
ns
nC
2011-03-08

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