BSS225_11 INFINEON [Infineon Technologies AG], BSS225_11 Datasheet - Page 2

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BSS225_11

Manufacturer Part Number
BSS225_11
Description
SIPMOS Small-Signal-Transistor
Manufacturer
INFINEON [Infineon Technologies AG]
Datasheet
Rev. 1.23
1)
Parameter
Thermal characteristics
Thermal resistance,
junction - minimal footprint
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain-source leakage current
Gate-source leakage current
Drain-source on-state resistance
Transconductance
V
DS
is zero-hour rated, see note at p.8
j
=25 °C, unless otherwise specified
1)
Symbol Conditions
R
V
V
I
I
R
g
D (off)
GSS
fs
(BR)DSS
GS(th)
thJA
DS(on)
V
V
V
T
V
T
V
V
V
|V
I
D
page 2
j
j
GS
DS
DS
DS
GS
GS
GS
=25 °C
=150 °C
=0.075 A
DS
=0 V, I
=600 V, V
=600 V, V
=0 V, I
=20 V, V
=4.5 V, I
=10 V, I
|>2|I
D
|R
D
D
=94 µA
=250 µA
D
D
DS
DS(on)max
=0.09 A
=0.09 A
GS
GS
=0 V
=0 V,
=0 V,
,
min.
0.05
600
1.3
-
-
-
-
-
-
Values
0.14
typ.
1.9
10
30
28
-
-
-
-
max.
125
100
2.3
0.1
45
45
5
-
-
BSS225
Unit
K/W
V
µA
nA
Ω
S
2011-03-08

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