KMM5362205C2W SAMSUNG [Samsung semiconductor], KMM5362205C2W Datasheet - Page 9

no-image

KMM5362205C2W

Manufacturer Part Number
KMM5362205C2W
Description
2M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
DRAM MODULE
WRITE CYCLE ( EARLY WRITE )
NOTE : D
CAS
RAS
DQ
OUT
W
A
V
V
V
V
V
V
V
V
V
V
IH
IL
IH
IL
IH
IL
IH
IL
= OPEN
IH
IL
-
-
-
-
-
-
-
-
-
-
t
t
ASR
CRP
ADDRESS
ROW
t
RAH
t
RAD
t
t
RCD
ASC
t
WCS
t
DS
DATA-IN
ADDRESS
COLUMN
t
CSH
t
- 9 -
WP
t
t
t
RAS
t
CAH
CWL
DH
t
WCH
t
RWL
t
CAS
t
t
RAL
RC
t
RSH
KMM5362205C2W/C2WG
t
RP
Rev. 0.0 (Nov. 1997)
t
CRP
Don t care
Undefined

Related parts for KMM5362205C2W