KMM5362205C2W SAMSUNG [Samsung semiconductor], KMM5362205C2W Datasheet - Page 11

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KMM5362205C2W

Manufacturer Part Number
KMM5362205C2W
Description
2M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
DRAM MODULE
HYPER PAGE WRITE CYCLE ( EARLY WRITE )
NOTE : D
RAS
CAS
DQ
W
OUT
A
V
V
V
V
V
V
V
V
V
V
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
= OPEN
-
-
-
-
-
-
-
-
-
-
t
t
CRP
ASR
ADDR.
ROW
t
RAH
t
RAD
t
RCD
t
t
ASC
t
WCS
t
CSH
DS
ADDRESS
COLUMN
t
DATA-IN
WP
VALID
t
CWL
t
t
WCH
CAH
t
t
DH
CAS
t
HPC
t
WCS
- 11 -
t
t
ASC
CP
t
DS
ADDRESS
COLUMN
t
DATA-IN
RASP
VALID
t
WP
t
¡ó
t
t
CWL
WCH
CAH
t
t
DH
CAS
¡ó
t
HPC
¡ó
¡ó
¡ó
¡ó
¡ó
t
KMM5362205C2W/C2WG
CP
t
t
WCS
t
ASC
ADDRESS
DS
COLUMN
DATA-IN
VALID
t
RHCP
t
t
t
WP
CWL
RWL
t
t
t
WCH
CAH
DH
t
CAS
t
RSH
Rev. 0.0 (Nov. 1997)
t
Don t care
Undefined
RP

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