K9F4G08U0A SAMSUNG [Samsung semiconductor], K9F4G08U0A Datasheet - Page 39

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K9F4G08U0A

Manufacturer Part Number
K9F4G08U0A
Description
FLASH MEMORY
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet

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Figure 17. Two-Plane Copy-Back Program Operation with Random Data Input
K9K8G08U1A
K9F4G08U0A
R/B
I/Ox
R/B
I/Ox
R/B
I/Ox
Note
00h
:
1
4
2
1. Copy-Back Program operation is allowed only within the same memory plane.
2. On the same plane, It’s prohibited to operate copy-back program from an odd address page(source page) to an even
address page(target page) or from an even address page(source page) to an odd address page(target page).
Therefore, the copy-back program is permitted just between odd address pages or even address pages.
3. EDC status Bits are not available during copy back for some bits or bytes modified by Random Data Input operation.
In case of the 528 byte plane unit modification, EDC status bits are available.
.
Source Address On Plane0
Col. Add.1,2 & Row Add.1,2,3
Any command between 11h and 81h is prohibited except 70h and FFh.
Add.(5Cycles)
85h
81h
Col. Add.1,2 & Row Add.1,2,3
Col. Add.1,2 & Row Add.1,2,3
A
A
A
A
A
A
A
A
0
12
18
19
Destination Address
Destination Address
0
12
18
19
~ A
~ A
~ A
~ A
~ A
~ A
Add.(5Cycles)
Add.(5Cycles)
11 :
11 :
17 :
29 :
35h
17 :
29 :
:
:
Fixed ’High’
Valid
Valid
Valid
Fixed ’Low’
Fixed ’Low’
Valid
Fixed ’Low’
t
R
Data
Data
00h
Source Address On Plane1
Col. Add.1,2 & Row Add.1,2,3
Add.(5Cycles)
85h
85h
39
Add.(2Cycles)
Add.(2Cycles)
Col. Add.1,2
Col. Add.1,2
35h
t
R
Data
Data
FLASH MEMORY
11h
10h
Preliminary
Note4
t
t
DBSY
PROG
1
2

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