K9F4G08U0A SAMSUNG [Samsung semiconductor], K9F4G08U0A Datasheet - Page 31

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K9F4G08U0A

Manufacturer Part Number
K9F4G08U0A
Description
FLASH MEMORY
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet

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K9K8G08U1A
K9F4G08U0A
4th ID Data
90 ID : Access command = 90H
3rd ID Data
ID Definition Table
1
2
3
4
5
Organization
Serial Access Minimum
Interleave Program
Between multiple chips
Page Size
(w/o redundant area )
Block Size
(w/o redundant area )
Redundant Area Size
( byte/512byte)
Internal Chip Number
Cell Type
Number of
Simultaneously
Programmed Pages
Cache Program
st
nd
rd
th
th
Byte
Byte
Byte
Byte
Byte
Description
Maker Code
Device Code
Internal Chip Number, Cell Type, Number of Simultaneously Programmed Pages, Etc
Page Size, Block Size,Redundant Area Size, Organization, Serial Access Minimum
Plane Number, Plane Size
128KB
256KB
512KB
50ns/30ns
25ns
Reserved
Reserved
1KB
2KB
4KB
8KB
64KB
8
16
x8
x16
1
2
4
8
16 Level Cell
1
2
4
8
Not Support
Support
Not Support
Support
2 Level Cell
4 Level Cell
8 Level Cell
Description
Description
31
I/O7
I/O7
0
1
0
1
0
1
I/O6
I/O6
0
1
0
1
I/O5 I/O4
I/O5 I/O4
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
FLASH MEMORY
I/O3
0
0
1
1
I/O3 I/O2
0
0
1
1
Preliminary
I/O2
0
1
0
1
0
1
I/O1 I/O0
I/O1 I/O0
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1

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