K9F4G08U0A SAMSUNG [Samsung semiconductor], K9F4G08U0A Datasheet - Page 17

• Manufacturer Part Number: K9F4G08U0A
• Description: FLASH MEMORY
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9K8G08U1A
K9F4G08U0A
NAND Flash Technical Notes
Copy-Back Operation with EDC & Sector Definition for EDC
Generally, copy-back program is very powerful to move data stored in a page without utilizing any external memory. But, if the source
page has one bit error due to charge loss or charge gain, then without EDC, the copy-back program operation could also accumulate
bit errors.
K9F4G08U0A supports copy-back with EDC to prevent cumulative bit errors. To make EDC valid, the page program operation
should be performed on either whole page(2112byte) or sector(528byte). Modifying the data of a sector by Random Data Input
before Copy-Back Program must be performed for the whole sector and is allowed only once per each sector. Any partial
modification smaller than a sector corrupts the on-chip EDC codes.
spare area.
Addressing for program operation
Within a block, the pages must be programmed consecutively from the LSB (least significant bit) page of the block to MSB (most sig-
nificant bit) pages of the block. Random page address programming is prohibited.
Table 2. Definition of the 528-Byte Sector
A 2,112-byte page is composed of 4 sectors of 528-byte and each 528-byte sector is composed of 512-byte main area and 16-byte
2’nd 528-Byte Sector
3’rd 528-Byte Sector
1’st 528-Byte Sector
4’th 528-Byte Sector
(1’st sector)
"A" area
512 Byte
Sector
Page 63
Page 31
Page 2
Page 1
Page 0
From the LSB page to MSB page
DATA IN: Data (1)
(2’nd sector)
512 Byte
"B" area
Area Name
Data register
Main Field (2,048 Byte)
"A"
"B"
"C"
"D"
Main Field (Column 0~2,047)
(64)
(32)
(3)
(2)
(1)
:
:
(Continued)
Data (64)
(3’rd sector)
"C" area
512 Byte
Column Address
1,024 ~ 1,535
1,536 ~ 2,047
512 ~ 1,023
0 ~ 511
17
(4’th sector)
"D" area
512 Byte
Page 63
Page 31
Page 2
Page 1
Page 0
Ex.) Random page program (Prohibition)
DATA IN: Data (1)
Area Name
(1’st sector)
Spare Field (Column 2,048~2,111)
"G"
"E"
"F"
"H"
"E" area
16 Byte
Data register
FLASH MEMORY
Spare Field (64 Byte)
(2’nd sector)
(64)
(32)
(1)
(3)
(2)
"F" area
16 Byte
:
:
Column Address
Preliminary
Data (64)
2,048 ~ 2,063
2,064 ~ 2,079
2,080 ~ 2,095
2,096 ~ 2,111
(3’rd sector)
"G" area
16 Byte
(4’th sector)
"H" area
16 Byte