K9F4G08U0A SAMSUNG [Samsung semiconductor], K9F4G08U0A Datasheet - Page 20
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K9F4G08U0A
Manufacturer Part Number
K9F4G08U0A
Description
FLASH MEMORY
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.K9F4G08U0A.pdf
(43 pages)
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K9K8G08U1A
K9F4G08U0A
Input Data Latch Cycle
ALE
CLE
CE
WE
I/Ox
CE
RE
R/B
I/Ox
* Serial Access Cycle after Read
NOTES : Transition is measured at ±200mV from steady state voltage with load.
t
RR
t
t
ALS
This parameter is sampled and not 100% tested.
tRLOH is valid when frequency is higher than 33MHz.
tRHOH starts to be valid when frequency is lower than 33MHz.
WP
t
DS
DIN 0
t
WC
t
REA
t
DH
t
WH
Dout
(CLE=L, WE=H, ALE=L)
t
RC
t
REH
t
WP
t
DS
DIN 1
t
REA
20
t
DH
Dout
t
RHZ
t
DIN final
WP
t
DS
t
DH
t
CH
t
CLH
t
REA
FLASH MEMORY
Dout
t
t
RHOH
t
RHZ
t
CHZ
COH
Preliminary