GS880E36BT-250IV GSI [GSI Technology], GS880E36BT-250IV Datasheet
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GS880E36BT-250IV
Manufacturer Part Number
GS880E36BT-250IV
Description
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
Manufacturer
GSI [GSI Technology]
Datasheet
1.GS880E36BT-250IV.pdf
(23 pages)
100-Pin TQFP
Commercial Temp
Industrial Temp
Features
• FT pin for user-configurable flow through or pipeline
• Dual Cycle Deselect (DCD) operation
• 1.8 V or 2.5 V +10%/–10% core power supply
• 1.8 V or 2.5 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to Interleaved Pipeline mode
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard 100-lead TQFP package
• RoHS-compliant 100-lead TQFP package available
Functional Description
Applications
The GS880E18/32/36BT is a 9,437,184-bit (8,388,608-bit for
x32 version) high performance synchronous SRAM with a 2-
bit burst address counter. Although of a type originally
developed for Level 2 Cache applications supporting high
performance CPUs, the device now finds application in
synchronous SRAM applications, ranging from DSP main
store to networking chip set support.
Controls
Addresses, data I/Os, chip enables (E1, E2, E3), address burst
control inputs (ADSP, ADSC, ADV), and write control inputs
(Bx, BW, GW) are synchronous and are controlled by a
positive-edge-triggered clock input (CK). Output enable (G)
and power down control (ZZ) are asynchronous inputs. Burst
cycles can be initiated with either ADSP or ADSC inputs. In
Burst mode, subsequent burst addresses are generated
internally and are controlled by ADV. The burst address
counter may be configured to count in either linear or
interleave order with the Linear Burst Order (LBO) input. The
Burst function need not be used. New addresses can be loaded
on every cycle with no degradation of chip performance.
Rev: 1.00 6/2006
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
operation
Flow Through
Pipeline
3-1-1-1
2-1-1-1
512K x 18, 256K x 32, 256K x 36
9Mb Sync Burst SRAMs
Curr (x32/x36)
Curr (x32/x36)
Curr (x18)
Curr (x18)
tCycle
tCycle
t
t
KQ
KQ
Paramter Synopsis
1/23
Flow Through/Pipeline Reads
The function of the Data Output register can be controlled by
the user via the FT mode pin (Pin 14). Holding the FT mode
pin low places the RAM in Flow Through mode, causing
output data to bypass the Data Output Register. Holding FT
high places the RAM in Pipeline mode, activating the rising-
edge-triggered Data Output Register.
DCD Pipelined Reads
The GS880E18/32/36BT is a DCD (Dual Cycle Deselect)
pipelined synchronous SRAM. SCD (Single Cycle Deselect)
versions are also available. DCD SRAMs pipeline disable
commands to the same degree as read commands. DCD RAMs
hold the deselect command for one full cycle and then begin
turning off their outputs just after the second rising edge of
clock.
Byte Write and Global Write
Byte write operation is performed by using Byte Write enable
(BW) input combined with one or more individual byte write
signals (Bx). In addition, Global Write (GW) is available for
writing all bytes at one time, regardless of the Byte Write
control inputs.
Sleep Mode
Low power (Sleep mode) is attained through the assertion
(High) of the ZZ signal, or by stopping the clock (CK).
Memory data is retained during Sleep mode.
Core and Interface Voltages
The GS880E18/32/36BT operates on a 1.8 V or 2.5 V power
supply. All input are 2.5 V and 1.8 V compatible. Separate
output power (V
from the internal circuits and are 2.5 V and 1.8 V compatible.
-250
200
230
160
185
3.0
4.0
5.5
5.5
-200
170
195
140
160
3.0
5.0
6.5
6.5
DDQ
) pins are used to decouple output noise
-150
140
160
128
145
3.8
6.7
7.5
7.5
GS880E18/32/36BT-xxxV
Unit
mA
mA
mA
mA
ns
ns
ns
ns
© 2006, GSI Technology
250 MHz–150 MHz
1.8 V or 2.5 V V
1.8 V or 2.5 V I/O
DD