GS880E32T-100 GSI [GSI Technology], GS880E32T-100 Datasheet - Page 11
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GS880E32T-100
Manufacturer Part Number
GS880E32T-100
Description
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs
Manufacturer
GSI [GSI Technology]
Datasheet
1.GS880E32T-100.pdf
(25 pages)
Absolute Maximum Ratings
(All voltages reference to V
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended
period of time, may affect reliability of this component.
Recommended Operating Conditions
Notes:
1.
2.
3.
4.
Rev: 1.11 11/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Ambient Temperature (Commercial Range Versions)
Ambient Temperature (Industrial Range Versions)
Unless otherwise noted, all performance specifications quoted are evaluated for worst case at both 2.75 V V
(i.e., 2.5 V I/O) and 3.6 V V
This device features input buffers compatible with both 3.3 V and 2.5 V I/O drivers.
Most speed grades and configurations of this device are offered in both Commercial and Industrial Temperature ranges. The part number of
Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are evaluated
for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be –2 V > Vi < V
Symbol
V
T
T
I
V
V
V
V
OUT
P
BIAS
DDQ
I
STG
DD
CK
I/O
IN
IN
D
I/O Supply Voltage
Input High Voltage
Input Low Voltage
Supply Voltage
Parameter
Output Current on Any I/O Pin
Voltage on Other Input Pins
Package Power Dissipation
Voltage on Clock Input Pin
Input Current on Any Pin
Temperature Under Bias
Storage Temperature
Voltage in V
Voltage on V
Voltage on I/O Pins
Description
SS
DDQ
)
3.135 V (i.e., 3.3 V I/O), and quoted at whichever condition is worst case.
DDQ
DD
Pins
Pins
Symbol
DD
V
V
V
V
+2 V with a pulse width not to exceed 20% tKC.
DDQ
T
T
–0.5 to V
11/25
DD
–0.5 to V
IH
IL
A
A
DDQ
DD
–0.5 to V
–0.5 to 4.6
–55 to 125
–55 to 125
–0.5 to 6
3.135
2.375
+0.5 ( 4.6 V max.)
Min.
Value
–0.3
+0.5 ( 4.6 V max.)
–40
1.7
+/–20
+/–20
0
1.5
DD
Typ.
3.3
2.5
25
25
—
—
GS880E18/32/36T-11/11.5/100/80/66
V
Unit
Max.
DD
mA
mA
o
o
V
W
V
V
V
V
V
3.6
0.8
70
85
C
C
DD
+0.3
© 2000, Giga Semiconductor, Inc.
DDQ
Unit
V
V
V
V
C
C
2.375 V
Preliminary
Notes
1
2
2
3
3