MT54W1MH36B-4 MICRON [Micron Technology], MT54W1MH36B-4 Datasheet - Page 13

• Manufacturer Part Number: MT54W1MH36B-4
• Manufacturer: MICRON [Micron Technology]

ABSOLUTE MAXIMUM RATINGS*
Voltage on V
Voltage on V
V
Storage Temperature ..............................-55ºC to +125ºC
Junction Temperature** ....................................... +125ºC
Short Circuit Output Current .............................. ±70mA
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
0ºC £ T
AC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
0ºC £ T
NOTE:
1. Outputs are impedance-controlled. |I
36Mb: 1.8V V
MT54W2MH18B_A.fm - Rev 9/02
2. Outputs are impedance-controlled. I
3. All voltages referenced to V
4. Overshoot:
5. AC load current is higher than the shown DC values. AC I/O curves are available upon request.
6. Output buffer supply can be set to 1.5V or 1.8V nominal ±0.1 with appropriate derating of AC timing parameters. Consult factory for
7. HSTL outputs meet JEDEC HSTL Class I and Class II standards.
8. To maintain a valid level, the transitioning edge of the input must:
DESCRIPTION
DESCRIPTION
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Clock Input Signal Voltage
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Supply Voltage
Isolated Output Buffer Supply
Reference Voltage
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
IN
Relative to V
Relative to V
Undershoot: V
Power-up:
During normal operation, V
(MIN) or operate at cycle rates less than
further information.
a. Sustain a constant slew rate from the current AC level through the target AC level, V
b. Reach at least the target AC level.
c. After the AC target level is reached, continue to maintain at least the target DC level, V
..................................................... -0.5V to V
A
A
DD
£ +70ºC;
£ +70ºC;
, HSTL, QDRIIb2 SRAM
DD
DD
V
V
SS
SS
Q Supply
Supply
IH
IL
IH
+1.7V £ V
+1.7V £ V
(
(
AC
........................................ 0.5V to +2.8V
....................................... -0.5V to +V
£ V
AC
) ³ -0.5V for t £
) £ V
DD
Q + 0.3V and V
DD
DD
DD
SS
DD
+ 0.7V for t £
(GND).
Q must not exceed V
£ +1.9V unless otherwise noted
£ +1.9V unless otherwise noted
0V £ V
Output(s) disabled,
t
0V £ V
OL
KHKH/2
OH
CONDITIONS
CONDITIONS
|I
I
DD
= (V
| = (V
OH
OL
t
KHKH (MIN).
IN
Note 1
Note 2
t
£ 1.7V and V
| £ 0.1mA
KHKH/2
£ 0.1mA
DD
4 MEG x 8, 4 MEG x 9, 2 MEG x 18, 1 MEG x 36
IN
£ V
DD
Q/2)/(RQ/5) for values of 175 W £ RQ £ 350 W .
£ V
Q/2)/(RQ/5) for values of 175 W £ RQ £ 350 W .
DD
DD
Q (Q)
DD
DD
Q
. Control input signals may not have pulse widths less than
DD
+ 0.5V
Q £ 1.4V for t £ 200ms
DD
V
SYMBOL
V
SYMBOL
OH
V
OL
V
V
V
V
V
13
IH
V
V
IL
V
IH AC
V
IL
IL
DD
IL
REF
OH
(
DD
(
(
OL
(
IN
(
O
LOW
DC )
LOW
DC
I
AC
Q
*Stresses greater than those listed under Absolute Maximum
Ratings may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at
these or any other conditions above those indicated in the
operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
**Maximum junction temperature depends upon package
type, cycle time, loading, ambient temperature, and airflow.
See Micron Technical Note TN-05-14 for more information.
)
)
)
)
)
1.8V V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
V
V
V
DD
DD
V
REF
V
DD
MIN
REF
Q/2 - 0.12
Q/2 - 0.12
MIN
0.68
–
-0.3
-0.3
V
1.7
1.4
+ 0.2
Q - 0.2
-5
-5
DD
+ 0.1
SS
IL
(
AC
IL
, HSTL, QDRIIb2 SRAM
(
) or V
DC
V
) or V
REF
MAX
V
V
IH
–
V
V
DD
DD
- 0.2
(
AC
V
IH
DD
DD
REF
Q/2 + 0.12
Q/2 + 0.12
(
MAX
V
).
DC
0.95
V
Q + 0.3
Q + 0.3
0.2
1.9
DD
5
5
DD
).
- 0.1
Q
UNITS
V
V
t
KHKL
UNITS
©2002, Micron Technology Inc.
µA
µA
V
V
V
V
V
V
V
V
V
V
ADVANCE
NOTES
NOTES
3, 4, 8
3, 4, 8
3, 5, 7
3, 5, 7
3, 5, 7
3, 5, 7
3, 4
3, 4
3, 4
3, 6
3
3