MT16VDDF12864HG-202 MICRON [Micron Technology], MT16VDDF12864HG-202 Datasheet - Page 20

• Manufacturer Part Number: MT16VDDF12864HG-202
• Description: SMALL-OUTLINE DDR SDRAM DIMM
• Manufacturer: MICRON [Micron Technology]

Notes
09005aef80a646bc
DDF16C64_128x64HG_B.fm - Rev. B 7/03 EN
10. I
11. This parameter is sampled. V
3. Outputs measured with equivalent load:
4. AC timing and I
8. I
1. All voltages referenced to V
2. Tests for AC timing, I
5. The AC and DC input level specifications are as
6. V
7. V
9. Enables on-chip refresh and address counters.
characteristics may be conducted at nominal ref-
erence/supply voltage levels, but the related spec-
ifications and device operation are guaranteed for
the full voltage range specified.
swing of up to 1.5V in the test environment, but
input timing is still referenced to V
crossing point for CK/CK#), and parameter speci-
fications are guaranteed for the specified AC input
levels under normal use conditions. The mini-
mum slew rate for the input signals used to test
the device is 1V/ns in the range between V
and V
defined in the SSTL_2 Standard (i.e., the receiver
will effectively switch as a result of the signal
crossing the AC input level, and will remain in that
state as long as the signal does not ring back
above [below] the DC input LOW [HIGH] level).
ting device and to track variations in the DC level
of the same. Peak-to-peak noise (non-common
mode) on V
DC value. Thus, from V
±25mV for DC error and an additional ±25mV for
AC noise. This measurement is to be taken at the
nearest V
system supply for signal termination resistors, is
expected to be set equal to V
variations in the DC level of V
rates. Specified values are obtained with mini-
mum cycle time at CL = 2 for -262, -26A, and -202,
CL = 2.5 for-335 and -265 with the outputs open.
properly initialized, and is averaged at the defined
cycle rate.
V
DD
DD
REF
TT
DD
Q = +2.5V ±0.2V, V
is not applied directly to the device. V
is dependent on output loading and cycle
specifications are tested after the device is
is expected to equal V
IH
(AC).
REF
Output
(V
REF
OUT
bypass capacitor.
may not exceed ±2 percent of the
)
DD
V
DD
tests may use a V
TT
REF
50
, and electrical AC and DC
30pF
Reference
Point
Ω
DD
SS
DD
= V
Q/2, V
.
REF
Q/2 of the transmit-
REF
SS
DD
, f = 100 MHz, =
.
and must track
= +2.5V ±0.2V,
REF
REF
is allowed
(or to the
IL
-to-V
TT
IL
(AC)
is a
IH
20
12. Command/Address input slew rate = 0.5V/ns. For
13. The CK/CK# input reference level (for timing ref-
14. Inputs are not recognized as valid until V
15. The output timing reference level, as measured at
16. tHZ and
17. The intent of the Don’t Care state after completion
18. This is not a device limit. The device will operate
19. It is recommended that DQS be valid (HIGH or
20. MIN (
25°C, V
= 0.2V. DM input is grouped with I/O pins, reflect-
ing the fact that they are matched in loading.
-262, -26A, and -265 with slew rates 1V/ns and
faster,
they are reduced to 750ps. If the slew rate is less
than 0.5 V/ns, timing must be derated:
additional 50ps per each 100mV/ns reduction in
slew rate from the 500mV/ns, while
constant. If the slew rate exceeds 4.5V/ns, func-
tionality is uncertain.
erenced to CK/CK#) is the point at which CK and
CK# cross; the input reference level for signals
other than CK/CK# is V
lizes. Exception: during the period before V
stabilizes, CKE £ 0.3 x V
the timing reference point indicated in Note 3, is
V
time windows as valid data transitions. These
parameters are not referenced to a specific voltage
level, but specify when the device output is no
longer driving (HZ) or begins driving (LZ).
of the postamble is the DQS-driven signal should
either be high, low, or high-Z and that any signal
transition within the input switching region must
follow valid input requirements. That is, if DQS
transitions high (above V
not transition low (below V
(MIN).
with a negative value, but system performance
could be degraded due to bus turnaround.
LOW) on or before the WRITE command. The
case shown (DQS going from High-Z to logic
LOW) applies when no WRITEs were previously in
progress on the bus. If a previous WRITE was in
progress, DQS could be HIGH during this time,
depending on
smallest multiple of
absolute Value for the respective parameter.
(MAX) for I
Micron Technology, Inc., reserves the right to change products or specifications without notice.
TT
.
t
t
RC or
OUT
IS and
t
LZ transitions occur in the same access
(DC) = V
DD
200-PIN DDR SODIMM
t
RFC) for I
t
measurements is the largest multi-
t
DQSS.
IH are reduced to 900ps; for -335,
512MB, 1GB (x64)
DD
t
CK that meets the minimum
Q/2, V
REF
DD
DD
IH
Q is recognized as LOW.
.
DC (MIN) then it must
IH
OUT
measurements is the
DC) prior to
(peak to peak) T
©2003 Micron Technology, Inc.
t
IH remains
t
REF
IS has an
t
DQSH
stabi-
t
RAS
REF
A