K4H560438D-GC SAMSUNG [Samsung semiconductor], K4H560438D-GC Datasheet - Page 9

• Manufacturer Part Number: K4H560438D-GC
• Description: DDR 256Mb
• Manufacturer: SAMSUNG [Samsung semiconductor]

GENERAL DESCRIPTION
The K4H560438D is 268,435,456 bits of double data rate synchronous DRAM organized as 4 x 16,777,216 words by 4 bits, fabricated
with SAMSUNG′s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to
333Mb/s per pin. I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable burst length and
programmable latencies allow the device to be useful for a variety of high performance memory system applications.
Recommended operating conditions(Voltage referenced to V
16M x 4Bit x 4 Banks Double Data Rate SDRAM
K4H560438D
Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
DC Operating Conditions
Absolute Maximum Rating
Supply voltage(for device with a nominal V
I/O Supply voltage
I/O Reference voltage
I/O Termination voltage(system)
Input logic high voltage
Input logic low voltage
Input Voltage Level, CK and CK inputs
Input Differential Voltage, CK and CK inputs
Input crossing point voltage, CK and CK inputs
Input leakage current
Output leakage current
Output High Current(Normal strengh driver)
Output High Current(Normal strengh driver)
Output High Current(Half strengh driver)
Output High Current(Half strengh driver)
;V
;V
;V
;V
OUT
OUT
OUT
OUT
Voltage on VDD & VDDQ supply relative to VSS
Exposure to higher than recommended voltage for extended periods of time could affect device reliability
Functional operation should be restricted to recommend operation condition.
= V
= V
= V
= V
TT
TT
Voltage on any pin relative to VSS
TT
TT
+ 0.84V
+ 0.45V
- 0.84V
- 0.45V
Storage temperature
Short circuit current
Power dissipation
Parameter
Parameter
DD
of 2.5V)
SS
Symbol
V
V
V
V
V
=0V, T
V
- 9 -
V
IH
IN
ID
IX
IL
V
V
I
I
I
I
I
DDQ
REF
OH
OH
(DC)
(DC)
OZ
OL
OL
(DC)
(DC)
(DC)
VDD, VDDQ
DD
I
TT
VIN, VOUT
I
Symbol
TSTG
A
IOS
PD
= 0 to 70°C)
VDDQ/2-50mV
V
V
REF
REF
-16.8
Min
1.15
16.8
-0.3
-0.3
2.3
2.3
0.3
-2
-5
-9
9
+0.15
-0.04
-55 ~ +150
-0.5 ~ 3.6
-1.0 ~ 3.6
VDDQ/2+50mV
Value
V
V
V
V
V
1.5
50
REF
REF
DDQ
DDQ
DDQ
Max
1.35
2.7
2.7
2
5
+0.04
-0.15
+0.3
+0.3
+0.6
Rev. 2.2 Mar. ’03
DDR SDRAM
Unit
mA
mA
mA
mA
uA
uA
V
V
V
V
V
V
V
V
Unit
mA
°C
W
V
V
Note
1
2
4
4
3
5